Reduction of radiation induced back channel threshold voltage shifts in partially depleted SIMOX CMOS devices by using ADVANTOX(TM ) substrates

Excessive total dose radiation induced back channel threshold voltage shifts often observed in fully depleted and partially depleted NMOS transistors fabricated in full dose SIMOX wafers can be greatly reduced by use of new low dose ADVANTOX(TM) substrates

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE Transactions on Nuclear Science 1997-12, Vol.44 (6), p.2101-2105
Hauptverfasser:	Liu, S T, Allen, L P, Anc, M J, Jenkins, W C, Hughes, H L, Twigg, M E, Lawrence, R K
Format:	Artikel
Sprache:	eng
Schlagworte:	ELECTRIC POTENTIAL ELECTRICAL PROPERTIES INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS IONIZING RADIATIONS MOS TRANSISTORS PHYSICAL RADIATION EFFECTS TESTING
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Beschreibung
Zusammenfassung:	Excessive total dose radiation induced back channel threshold voltage shifts often observed in fully depleted and partially depleted NMOS transistors fabricated in full dose SIMOX wafers can be greatly reduced by use of new low dose ADVANTOX(TM) substrates
ISSN:	0018-9499
DOI:	10.1109/23.659024