Polarization-insensitive high-contrast GaAs/AlGaAs waveguide modulator based on the Franz-Keldysh effect

Polarization-insensitive high-contrast GaAs/AlGaAs waveguide modulator based on the Franz-Keldysh effect

A GaAs/AlGaAs p-i-n double heterostructure waveguide modulator based on the Franz-Keldysh effect is reported. On/off ratios up to 40 dB are obtained over a broad range of wavelengths (>or=32 dB between 905 nm and 960 nm), while absorption loss in the on-state is very low (

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Veröffentlicht in:IEEE photonics technology letters 1993-12, Vol.5 (12), p.1386-1388
Hauptverfasser: Knupfer, B., Kiesel, P., Kneissl, M., Dankowski, S., Linder, N., Weimann, G., Dohler, G.H.
Format: Artikel
Sprache:eng
Schlagworte:
Absorption
Electrooptic modulators
Electrooptical waveguides
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gallium arsenide
Optical elements, devices, and systems
Optical modulation
Optical polarization
Optical processors, correlators, and modulators
Optical waveguides
Optics
Photonic band gap
Physics
PIN photodiodes
Stark effect
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Beschreibung
Zusammenfassung:A GaAs/AlGaAs p-i-n double heterostructure waveguide modulator based on the Franz-Keldysh effect is reported. On/off ratios up to 40 dB are obtained over a broad range of wavelengths (>or=32 dB between 905 nm and 960 nm), while absorption loss in the on-state is very low (
ISSN:1041-1135
1941-0174
DOI:10.1109/68.262549