Frequency analysis of GaN MESFETs using full-band cellular Monte Carlo

A full‐band electron transport calculation in wurtzite phase GaN based on a detailed model of the electron‐phonon interactions using a Cellular Monte Carlo (CMC) approach is applied to the frequency analysis of MESFETs. Realistic polar‐optical phonon, impurity, piezoelectric and dislocation scattering is included in the full‐band CMC simulator, which shows good agreement with measured velocity‐field data. The effect of the dislocation scattering on the MESFET RF characteristics is examined as well, indicating that the computed cut‐off frequency is affected by the crystal dislocation density and bias conditions. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)