Radiation hardened micron and submicron MOSFETs containing fluorinated oxides
The generation of interface traps and oxide trapped charge in fluorinated MOSFETs and MOS capacitors has been found to depend strongly on the amount of fluorine introduced. In this study, the fluorine is introduced by low-energy F implantation into the surface layer of the polycrystalline silicon ga...
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| Veröffentlicht in: | IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) 1989-12, Vol.36 (6), p.2116-2123 |
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| container_title | IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) |
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| creator | Nishioka, Y. Ohyu, K. Ohji, Y. Kato, M. da Silva, E.F. Ma, T.P. |
| description | The generation of interface traps and oxide trapped charge in fluorinated MOSFETs and MOS capacitors has been found to depend strongly on the amount of fluorine introduced. In this study, the fluorine is introduced by low-energy F implantation into the surface layer of the polycrystalline silicon gate electrode, followed by annealing at 950 degrees C to diffuse F into the gate SiO/sub 2/, toward the SiO/sub 2//Si interface The improved interface radiation hardness is attributed to the strain relaxation near the SiO/sub 2//Si interface due to fluorine incorporation. An optimum F implant dose has been found to exist for a given technology; in the present case the optimum dose appears to be 2*10/sup 15/ cm/sup -2/. The results demonstrate the potential of the technique for producing radiation hard micron and submicron MOS devices.< > |
| doi_str_mv | 10.1109/23.45413 |
| format | Article |
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In this study, the fluorine is introduced by low-energy F implantation into the surface layer of the polycrystalline silicon gate electrode, followed by annealing at 950 degrees C to diffuse F into the gate SiO/sub 2/, toward the SiO/sub 2//Si interface The improved interface radiation hardness is attributed to the strain relaxation near the SiO/sub 2//Si interface due to fluorine incorporation. An optimum F implant dose has been found to exist for a given technology; in the present case the optimum dose appears to be 2*10/sup 15/ cm/sup -2/. The results demonstrate the potential of the technique for producing radiation hard micron and submicron MOS devices.< ></description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/23.45413</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>United States: IEEE</publisher><subject>360605 - Materials- Radiation Effects ; 440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems ; 640302 - Atomic, Molecular & Chemical Physics- Atomic & Molecular Properties & Theory ; Annealing ; ATOMIC AND MOLECULAR PHYSICS ; CAPACITORS ; CHALCOGENIDES ; CHEMICAL REACTIONS ; CRYSTALS ; ELECTRICAL EQUIPMENT ; Electrodes ; ELECTRONIC CIRCUITS ; ELEMENTS ; FIELD EFFECT TRANSISTORS ; FLUORINATION ; GATING CIRCUITS ; HALOGENATION ; HARDENING ; HOLE MOBILITY ; Implants ; INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY ; INTERFACES ; ION IMPLANTATION ; MATERIALS SCIENCE ; MOBILITY ; MOS capacitors ; MOS devices ; MOS TRANSISTORS ; MOSFET ; MOSFETs ; Oxidation ; OXIDES ; OXYGEN COMPOUNDS ; PHYSICAL RADIATION EFFECTS ; POLYCRYSTALS ; RADIATION EFFECTS ; RADIATION HARDENING ; SEMICONDUCTOR DEVICES ; SEMIMETALS ; SILICON ; SILICON COMPOUNDS ; SILICON OXIDES ; Surface treatment ; TRANSISTORS</subject><ispartof>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), 1989-12, Vol.36 (6), p.2116-2123</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c332t-2574f48146ed2d77eea63407d87b30a3caa4a94e30a9a85b0b76e9b59b4bd4213</citedby><cites>FETCH-LOGICAL-c332t-2574f48146ed2d77eea63407d87b30a3caa4a94e30a9a85b0b76e9b59b4bd4213</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/45413$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,309,310,314,776,780,785,786,792,881,23909,23910,25118,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/45413$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://www.osti.gov/biblio/6959469$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Nishioka, Y.</creatorcontrib><creatorcontrib>Ohyu, K.</creatorcontrib><creatorcontrib>Ohji, Y.</creatorcontrib><creatorcontrib>Kato, M.</creatorcontrib><creatorcontrib>da Silva, E.F.</creatorcontrib><creatorcontrib>Ma, T.P.</creatorcontrib><title>Radiation hardened micron and submicron MOSFETs containing fluorinated oxides</title><title>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)</title><addtitle>TNS</addtitle><description>The generation of interface traps and oxide trapped charge in fluorinated MOSFETs and MOS capacitors has been found to depend strongly on the amount of fluorine introduced. In this study, the fluorine is introduced by low-energy F implantation into the surface layer of the polycrystalline silicon gate electrode, followed by annealing at 950 degrees C to diffuse F into the gate SiO/sub 2/, toward the SiO/sub 2//Si interface The improved interface radiation hardness is attributed to the strain relaxation near the SiO/sub 2//Si interface due to fluorine incorporation. An optimum F implant dose has been found to exist for a given technology; in the present case the optimum dose appears to be 2*10/sup 15/ cm/sup -2/. The results demonstrate the potential of the technique for producing radiation hard micron and submicron MOS devices.< ></description><subject>360605 - Materials- Radiation Effects</subject><subject>440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems</subject><subject>640302 - Atomic, Molecular & Chemical Physics- Atomic & Molecular Properties & Theory</subject><subject>Annealing</subject><subject>ATOMIC AND MOLECULAR PHYSICS</subject><subject>CAPACITORS</subject><subject>CHALCOGENIDES</subject><subject>CHEMICAL REACTIONS</subject><subject>CRYSTALS</subject><subject>ELECTRICAL EQUIPMENT</subject><subject>Electrodes</subject><subject>ELECTRONIC CIRCUITS</subject><subject>ELEMENTS</subject><subject>FIELD EFFECT TRANSISTORS</subject><subject>FLUORINATION</subject><subject>GATING CIRCUITS</subject><subject>HALOGENATION</subject><subject>HARDENING</subject><subject>HOLE MOBILITY</subject><subject>Implants</subject><subject>INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY</subject><subject>INTERFACES</subject><subject>ION IMPLANTATION</subject><subject>MATERIALS SCIENCE</subject><subject>MOBILITY</subject><subject>MOS capacitors</subject><subject>MOS devices</subject><subject>MOS TRANSISTORS</subject><subject>MOSFET</subject><subject>MOSFETs</subject><subject>Oxidation</subject><subject>OXIDES</subject><subject>OXYGEN COMPOUNDS</subject><subject>PHYSICAL RADIATION EFFECTS</subject><subject>POLYCRYSTALS</subject><subject>RADIATION EFFECTS</subject><subject>RADIATION HARDENING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SEMIMETALS</subject><subject>SILICON</subject><subject>SILICON COMPOUNDS</subject><subject>SILICON OXIDES</subject><subject>Surface treatment</subject><subject>TRANSISTORS</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNqNkEtLAzEUhYMoWKvg1t3gQtxMzXOSLKX4gpaCj3XITO7YSJupkwzovzc64trVvYf7ncPlIHRK8IwQrK8om3HBCdtDEyKEKomQah9NMCaq1FzrQ3QU41uWXGAxQctH67xNvgvF2vYOArhi65s-axtcEYf6Vy1XT7c3z7FoupCsDz68Fu1m6HofbMqe7sM7iMfooLWbCCe_c4pesml-Xy5Wdw_z60XZMEZTSYXkLVeEV-CokxLAVoxj6ZSsGbassZZbzSHv2ipR41pWoGuha147TgmbovMxt4vJm9j4BM06fxagSabSQvNKZ-hihHZ99z5ATGbrYwObjQ3QDdFQJQWRiv4DFDSHqgxejmBuJMYeWrPr_db2n4Zg892-ocz8tJ_RsxH1APCHjbcv74V-OQ</recordid><startdate>19891201</startdate><enddate>19891201</enddate><creator>Nishioka, Y.</creator><creator>Ohyu, K.</creator><creator>Ohji, Y.</creator><creator>Kato, M.</creator><creator>da Silva, E.F.</creator><creator>Ma, T.P.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>JG9</scope><scope>OTOTI</scope></search><sort><creationdate>19891201</creationdate><title>Radiation hardened micron and submicron MOSFETs containing fluorinated oxides</title><author>Nishioka, Y. ; Ohyu, K. ; Ohji, Y. ; Kato, M. ; da Silva, E.F. ; Ma, T.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c332t-2574f48146ed2d77eea63407d87b30a3caa4a94e30a9a85b0b76e9b59b4bd4213</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>360605 - Materials- Radiation Effects</topic><topic>440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems</topic><topic>640302 - Atomic, Molecular & Chemical Physics- Atomic & Molecular Properties & Theory</topic><topic>Annealing</topic><topic>ATOMIC AND MOLECULAR PHYSICS</topic><topic>CAPACITORS</topic><topic>CHALCOGENIDES</topic><topic>CHEMICAL REACTIONS</topic><topic>CRYSTALS</topic><topic>ELECTRICAL EQUIPMENT</topic><topic>Electrodes</topic><topic>ELECTRONIC CIRCUITS</topic><topic>ELEMENTS</topic><topic>FIELD EFFECT TRANSISTORS</topic><topic>FLUORINATION</topic><topic>GATING CIRCUITS</topic><topic>HALOGENATION</topic><topic>HARDENING</topic><topic>HOLE MOBILITY</topic><topic>Implants</topic><topic>INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY</topic><topic>INTERFACES</topic><topic>ION IMPLANTATION</topic><topic>MATERIALS SCIENCE</topic><topic>MOBILITY</topic><topic>MOS capacitors</topic><topic>MOS devices</topic><topic>MOS TRANSISTORS</topic><topic>MOSFET</topic><topic>MOSFETs</topic><topic>Oxidation</topic><topic>OXIDES</topic><topic>OXYGEN COMPOUNDS</topic><topic>PHYSICAL RADIATION EFFECTS</topic><topic>POLYCRYSTALS</topic><topic>RADIATION EFFECTS</topic><topic>RADIATION HARDENING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SEMIMETALS</topic><topic>SILICON</topic><topic>SILICON COMPOUNDS</topic><topic>SILICON OXIDES</topic><topic>Surface treatment</topic><topic>TRANSISTORS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nishioka, Y.</creatorcontrib><creatorcontrib>Ohyu, K.</creatorcontrib><creatorcontrib>Ohji, Y.</creatorcontrib><creatorcontrib>Kato, M.</creatorcontrib><creatorcontrib>da Silva, E.F.</creatorcontrib><creatorcontrib>Ma, T.P.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>Materials Research Database</collection><collection>OSTI.GOV</collection><jtitle>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nishioka, Y.</au><au>Ohyu, K.</au><au>Ohji, Y.</au><au>Kato, M.</au><au>da Silva, E.F.</au><au>Ma, T.P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Radiation hardened micron and submicron MOSFETs containing fluorinated oxides</atitle><jtitle>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)</jtitle><stitle>TNS</stitle><date>1989-12-01</date><risdate>1989</risdate><volume>36</volume><issue>6</issue><spage>2116</spage><epage>2123</epage><pages>2116-2123</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>The generation of interface traps and oxide trapped charge in fluorinated MOSFETs and MOS capacitors has been found to depend strongly on the amount of fluorine introduced. In this study, the fluorine is introduced by low-energy F implantation into the surface layer of the polycrystalline silicon gate electrode, followed by annealing at 950 degrees C to diffuse F into the gate SiO/sub 2/, toward the SiO/sub 2//Si interface The improved interface radiation hardness is attributed to the strain relaxation near the SiO/sub 2//Si interface due to fluorine incorporation. An optimum F implant dose has been found to exist for a given technology; in the present case the optimum dose appears to be 2*10/sup 15/ cm/sup -2/. The results demonstrate the potential of the technique for producing radiation hard micron and submicron MOS devices.< ></abstract><cop>United States</cop><pub>IEEE</pub><doi>10.1109/23.45413</doi><tpages>8</tpages></addata></record> |
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| issn | 0018-9499 1558-1578 |
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| subjects | 360605 - Materials- Radiation Effects 440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems 640302 - Atomic, Molecular & Chemical Physics- Atomic & Molecular Properties & Theory Annealing ATOMIC AND MOLECULAR PHYSICS CAPACITORS CHALCOGENIDES CHEMICAL REACTIONS CRYSTALS ELECTRICAL EQUIPMENT Electrodes ELECTRONIC CIRCUITS ELEMENTS FIELD EFFECT TRANSISTORS FLUORINATION GATING CIRCUITS HALOGENATION HARDENING HOLE MOBILITY Implants INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY INTERFACES ION IMPLANTATION MATERIALS SCIENCE MOBILITY MOS capacitors MOS devices MOS TRANSISTORS MOSFET MOSFETs Oxidation OXIDES OXYGEN COMPOUNDS PHYSICAL RADIATION EFFECTS POLYCRYSTALS RADIATION EFFECTS RADIATION HARDENING SEMICONDUCTOR DEVICES SEMIMETALS SILICON SILICON COMPOUNDS SILICON OXIDES Surface treatment TRANSISTORS |
| title | Radiation hardened micron and submicron MOSFETs containing fluorinated oxides |
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