Radiation hardened micron and submicron MOSFETs containing fluorinated oxides

The generation of interface traps and oxide trapped charge in fluorinated MOSFETs and MOS capacitors has been found to depend strongly on the amount of fluorine introduced. In this study, the fluorine is introduced by low-energy F implantation into the surface layer of the polycrystalline silicon ga...

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Veröffentlicht in:	IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) 1989-12, Vol.36 (6), p.2116-2123
Hauptverfasser:	Nishioka, Y., Ohyu, K., Ohji, Y., Kato, M., da Silva, E.F., Ma, T.P.
Format:	Artikel
Sprache:	eng
Schlagworte:	360605 - Materials- Radiation Effects 440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems 640302 - Atomic, Molecular & Chemical Physics- Atomic & Molecular Properties & Theory Annealing ATOMIC AND MOLECULAR PHYSICS CAPACITORS CHALCOGENIDES CHEMICAL REACTIONS CRYSTALS ELECTRICAL EQUIPMENT Electrodes ELECTRONIC CIRCUITS ELEMENTS FIELD EFFECT TRANSISTORS FLUORINATION GATING CIRCUITS HALOGENATION HARDENING HOLE MOBILITY Implants INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY INTERFACES ION IMPLANTATION MATERIALS SCIENCE MOBILITY MOS capacitors MOS devices MOS TRANSISTORS MOSFET MOSFETs Oxidation OXIDES OXYGEN COMPOUNDS PHYSICAL RADIATION EFFECTS POLYCRYSTALS RADIATION EFFECTS RADIATION HARDENING SEMICONDUCTOR DEVICES SEMIMETALS SILICON SILICON COMPOUNDS SILICON OXIDES Surface treatment TRANSISTORS
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Beschreibung
Zusammenfassung:	The generation of interface traps and oxide trapped charge in fluorinated MOSFETs and MOS capacitors has been found to depend strongly on the amount of fluorine introduced. In this study, the fluorine is introduced by low-energy F implantation into the surface layer of the polycrystalline silicon gate electrode, followed by annealing at 950 degrees C to diffuse F into the gate SiO/sub 2/, toward the SiO/sub 2//Si interface The improved interface radiation hardness is attributed to the strain relaxation near the SiO/sub 2//Si interface due to fluorine incorporation. An optimum F implant dose has been found to exist for a given technology; in the present case the optimum dose appears to be 2*10/sup 15/ cm/sup -2/. The results demonstrate the potential of the technique for producing radiation hard micron and submicron MOS devices.< >
ISSN:	0018-9499 1558-1578
DOI:	10.1109/23.45413