New materials for diode laser pumping of solid-state lasers

New materials for diode laser pumping of solid-state lasers

The authors review recent progress in the development of new materials for III-V semiconductor diode lasers useful for pumping solid-state lasers. All of the diode lasers discussed are grown on GaAs substrates. Particular emphasis is placed on the performance and reliability of high-CW-power straine...

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Veröffentlicht in:IEEE journal of quantum electronics 1992-04, Vol.28 (4), p.942-951
Hauptverfasser: Wang, C.A., Groves, S.H.
Format: Artikel
Sprache:eng
Schlagworte:
Diode lasers
Gallium arsenide
III-V semiconductor materials
Laser excitation
Optical materials
Pump lasers
Semiconductor diodes
Semiconductor lasers
Solid lasers
Substrates
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Zusammenfassung:The authors review recent progress in the development of new materials for III-V semiconductor diode lasers useful for pumping solid-state lasers. All of the diode lasers discussed are grown on GaAs substrates. Particular emphasis is placed on the performance and reliability of high-CW-power strained-layer InGaAs-AlGaAs diode lasers emitting in the wavelength range between 0.87 and 1.1 mu m, improved resistance to degradation of 0.78 to 0.87 mu m diode lasers afforded by the strained-layer AlInGaAs-AlGaAs and lattice-matched GaInAsP-GaInP materials systems, and improved performance of visible diode lasers utilizing the materials system GaInP-AlGaInP.< >
ISSN:0018-9197
1558-1713
DOI:10.1109/3.135213