Activation of boron and phosphorus atoms implanted in polycrystalline silicon films at low temperatures
Phosphorus atoms implanted in laser crystallized polycrystalline silicon films were activated by a heat treatment in air at 260 °C for 1, 3 and 24 h. Analysis of ultraviolet reflectivity of phosphorus-doped silicon films implanted by ion doping method at 4 keV revealed that the thickness of the top...
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| Veröffentlicht in: | Thin solid films 2005-09, Vol.487 (1), p.252-254 |
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| container_title | Thin solid films |
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| creator | Andoh, Nobuyuki Sameshima, Toshiyuki Andoh, Yasunori |
| description | Phosphorus atoms implanted in laser crystallized polycrystalline silicon films were activated by a heat treatment in air at 260 °C for 1, 3 and 24 h. Analysis of ultraviolet reflectivity of phosphorus-doped silicon films implanted by ion doping method at 4 keV revealed that the thickness of the top disordered layer formed by ion bombardment was 6 nm. It is reduced to 4 nm by a 3 h heat treatment at 260 °C by recrystallization of disordered region. The electrical conductance of silicon films implanted increased to 1.7×10
5 S/sq after 3 h heat treatment. |
| doi_str_mv | 10.1016/j.tsf.2005.01.074 |
| format | Article |
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5 S/sq after 3 h heat treatment.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Growth from solid phases (including multiphase diffusion and recrystallization)</subject><subject>Impurity activation</subject><subject>Ion doping</subject><subject>Low temperature</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Physics</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp9kE9vFDEMxUcIJJbSD8AtF7jN4MyfzI44VRVtkSpxgXOUcZySVWYyxNmi_fZktZW4cbDsw-_Zfq-qPkhoJEj1-dBkdk0LMDQgGxj7V9VO7sepbsdOvq52AD3UCiZ4W71jPgCAbNtuVz3dYPbPJvu4iujEHFMZzGrF9ityqXRkYXJcWPhlC2bNZIVfxRbDCdOJswnBryTYB49F6XxYzgIR4h-RadkomXxMxO-rN84EpuuXflX9vPv64_ahfvx-_-325rHGbtjnWhH20k3OohxUtyfb4jy2CoxRFsfZTcrAJOWAM5p-UCMWj_2AE1mrBjfb7qr6dNm7pfj7SJz14hkplNcpHlm3-wEUSFlAeQExReZETm_JLyadtAR9jlQfdIlUnyPVIHWJtGg-viw3jCa4ZFb0_E84QgfQtYX7cuGoOH32lDSjpxXJ-kSYtY3-P1f-AkOAjvc</recordid><startdate>20050901</startdate><enddate>20050901</enddate><creator>Andoh, Nobuyuki</creator><creator>Sameshima, Toshiyuki</creator><creator>Andoh, Yasunori</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20050901</creationdate><title>Activation of boron and phosphorus atoms implanted in polycrystalline silicon films at low temperatures</title><author>Andoh, Nobuyuki ; Sameshima, Toshiyuki ; Andoh, Yasunori</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-6ec41f9fdc15638ed2cb7260aa6dc7bf96a09115cbca4567c18745c9edd65fbd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Growth from solid phases (including multiphase diffusion and recrystallization)</topic><topic>Impurity activation</topic><topic>Ion doping</topic><topic>Low temperature</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Physics</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Andoh, Nobuyuki</creatorcontrib><creatorcontrib>Sameshima, Toshiyuki</creatorcontrib><creatorcontrib>Andoh, Yasunori</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Andoh, Nobuyuki</au><au>Sameshima, Toshiyuki</au><au>Andoh, Yasunori</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Activation of boron and phosphorus atoms implanted in polycrystalline silicon films at low temperatures</atitle><jtitle>Thin solid films</jtitle><date>2005-09-01</date><risdate>2005</risdate><volume>487</volume><issue>1</issue><spage>252</spage><epage>254</epage><pages>252-254</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>Phosphorus atoms implanted in laser crystallized polycrystalline silicon films were activated by a heat treatment in air at 260 °C for 1, 3 and 24 h. Analysis of ultraviolet reflectivity of phosphorus-doped silicon films implanted by ion doping method at 4 keV revealed that the thickness of the top disordered layer formed by ion bombardment was 6 nm. It is reduced to 4 nm by a 3 h heat treatment at 260 °C by recrystallization of disordered region. The electrical conductance of silicon films implanted increased to 1.7×10
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Growth from solid phases (including multiphase diffusion and recrystallization) Impurity activation Ion doping Low temperature Materials science Methods of crystal growth physics of crystal growth Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Activation of boron and phosphorus atoms implanted in polycrystalline silicon films at low temperatures |
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