Femtosecond laser-induced crystallization in amorphous Ge2Sb2Te5 films

Crystallization in amorphous Ge2Sb2Te5 films by irradiation with femtosecond laser was investigated. The reflectivity and X-ray diffraction measurements confirmed that the crystalline state has been achieved in amorphous Ge2Sb2Te5 films under the irradiation of femtosecond laser with an average powe...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Thin solid films 2005-03, Vol.474 (1-2), p.169-172
Hauptverfasser:	Zhang, Guangjun, Gu, Donghong, Gan, Fuxi, Jiang, Xiongwei, Chen, Qingxi
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous materials Annealing Condensed matter: structure, mechanical and thermal properties Crystallization Exact sciences and technology Femtosecond laser Physical radiation effects, radiation damage Physics Structure and morphology thickness Structure of solids and liquids crystallography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Ultraviolet, visible, and infrared radiation effects (including laser radiation)
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Crystallization in amorphous Ge2Sb2Te5 films by irradiation with femtosecond laser was investigated. The reflectivity and X-ray diffraction measurements confirmed that the crystalline state has been achieved in amorphous Ge2Sb2Te5 films under the irradiation of femtosecond laser with an average power of 65 mW at a frequency of 1000 Hz and a pulsed width of 120 fs. The surface morphology before and after femtosecond laser irradiation was studied by scanning electron microscope; results showed that the surface of films with irradiation of femtosecond laser was composed of some the crystallized micro-region.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2004.08.122