Novel design for high-power single-lateral-mode lasers

A new laser design for single-mode high-power applications is reported. The waveguide is a laterally flaring and transversely tapering GaAs buried ridge fabricated by selective area epitaxy. Single-lateral-mode powers of 200 mW were achieved.

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE photonics technology letters 2001-10, Vol.13 (10), p.1064-1066
Hauptverfasser:	Huber, A.E., Yeoh, T.S., Swint, R.B., Woo, C.Y., Lee, K.E., Roh, S.D., Coleman, J.J., Faircloth, B.O., Zediker, M.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Biomedical optical imaging Epitaxy Erbium-doped fiber lasers Gallium arsenide Gallium arsenides Lab-on-a-chip Laser modes Lasers Optical design Optical pumping Optical waveguides Photonics Pump lasers Ridges Semiconductor lasers Tapering Waveguide lasers Waveguides
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Beschreibung
Zusammenfassung:	A new laser design for single-mode high-power applications is reported. The waveguide is a laterally flaring and transversely tapering GaAs buried ridge fabricated by selective area epitaxy. Single-lateral-mode powers of 200 mW were achieved.
ISSN:	1041-1135 1941-0174
DOI:	10.1109/68.950736