Fabrication of high performance pentacene thin film transistors using poly(4-vinylphenol) as the gate insulator on polyethyleneterephthalate substrates

Pentacene thin film transistors (TFTs) were fabricated by using poly(4-vinylphenol) as the gate insulator and pentacene as the organic semiconductor on polyethyleneterephthalate substrates. The TFTs were characterized and the following parameters were obtained: a mobility of 0DDT8 cm2/V s+/-0DDT2 cm...

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Veröffentlicht in:	Thin solid films 2005-12, Vol.493 (1-2), p.278-281
Hauptverfasser:	HYUN SOOK BYUN, XU, Yong-Xian, CHUNG KUN SONG
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Field effect devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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