Fabrication of high performance pentacene thin film transistors using poly(4-vinylphenol) as the gate insulator on polyethyleneterephthalate substrates

Pentacene thin film transistors (TFTs) were fabricated by using poly(4-vinylphenol) as the gate insulator and pentacene as the organic semiconductor on polyethyleneterephthalate substrates. The TFTs were characterized and the following parameters were obtained: a mobility of 0DDT8 cm2/V s+/-0DDT2 cm2/V s, an on/off current ratio of 106and a subthreshold slope of 1DDT0 V/dec. Inverter circuits based on the organic TFTs exhibited transfer curves typical of inverters with gains of 9DDT7 and a little hysteresis, which is indicative of a small number of interface states.