Characterisation of GaN crystals and epilayers grown from a solution at room pressure

GaN crystals were synthesised in a horizontal reactor system using ammonia as a nitrogen source. In the first part of this project a parameter study was performed to evaluate a suitable growth window, concerning e.g. process temperature, gas flows or partial pressures of the process gases. These fir...

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Veröffentlicht in:	Physica status solidi. C 2005-05, Vol.2 (7), p.2040-2043
Hauptverfasser:	Meissner, E., Birkmann, B., Hussy, S., Sun, G., Friedrich, J., Mueller, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	68.55.Ac 78.30.Fs 78.55.Cr 81.05.Ea 81.10.Dn 81.15.Lm
Online-Zugang:	Volltext
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