Polarization dependence of a 1.52 mum InGaAs/InP multiple quantum well waveguide electroabsorption modulator

Polarization dependence of a 1.52 mum InGaAs/InP multiple quantum well waveguide electroabsorption modulator

A ridge-waveguide In(0.53)Ga(0.47)As/InP multiple-quantum-well (MQW) electroabsorption modulator operating at a wavelength of 1.52 mum is demonstrated. The modulator exhibits large polarization-dependent electroabsorption behavior which favors the modulation of the TM mode. At a reverse bias of 10 V...

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Veröffentlicht in:IEEE photonics technology letters 1990-04, Vol.2 (4), p.257-259
Hauptverfasser: Pappert, S A, Orazi, R J, Vu, T T, Lin, S C, Clawson, A R, Yu, P K L
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Sprache:eng
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Zusammenfassung:A ridge-waveguide In(0.53)Ga(0.47)As/InP multiple-quantum-well (MQW) electroabsorption modulator operating at a wavelength of 1.52 mum is demonstrated. The modulator exhibits large polarization-dependent electroabsorption behavior which favors the modulation of the TM mode. At a reverse bias of 10 V, the modulator has a 24.5-dB extinction ratio for the TM mode, whereas that for the TE mode is only 11.1 dB. Polarization-dependent saturation of absorption has been observed in this device for incident optical power levels of less than 1 mW
ISSN:1041-1135
DOI:10.1109/68.53254