Applications of junction compensation techniques in reducing transient gamma radiation effects in transistor circuits
Any transistor exposed to transient gamma radiation will produce a large transient photocurrent output pulse unless the circuit is hardened or protected against this effect. The hardening technique described in this paper consists of adding a reverse-biased junction between the collector and the bas...
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Veröffentlicht in: | IEEE (Inst. Elec. Electron. Eng.), Trans. Electron Devices ED-16: 912-16(Nov 1969) Trans. Electron Devices ED-16: 912-16(Nov 1969), 1969-11, Vol.16 (11), p.912-916 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Any transistor exposed to transient gamma radiation will produce a large transient photocurrent output pulse unless the circuit is hardened or protected against this effect. The hardening technique described in this paper consists of adding a reverse-biased junction between the collector and the base of a transistor, producing a photocurrent which cancels or compensates for the radiation-induced current. Both computer and experimental results show a significant hardening achieved by this method which is applicable to microcircuit systems as well as to discrete component systems. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/T-ED.1969.16880 |