New method to determine the base resistance of bipolar transistors

A new method to determine the base resistance of bipolar transistors under forward-bias conditions is presented. Using special transistor structures, the total base resistance has been directly measured and then separated into its components, the external and internal base resistances. The sheet res...

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Veröffentlicht in:	IEEE electron device letters 1992-03, Vol.13 (3), p.158-160
Hauptverfasser:	Weng, J., Holz, J., Meister, T.F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bipolar transistor circuits Bipolar transistors Contact resistance Current measurement Design optimization Economic indicators Electrical resistance measurement Electronics Exact sciences and technology Noise measurement Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Testing Transistors Voltage
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