New method to determine the base resistance of bipolar transistors

A new method to determine the base resistance of bipolar transistors under forward-bias conditions is presented. Using special transistor structures, the total base resistance has been directly measured and then separated into its components, the external and internal base resistances. The sheet res...

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Veröffentlicht in:	IEEE electron device letters 1992-03, Vol.13 (3), p.158-160
Hauptverfasser:	Weng, J., Holz, J., Meister, T.F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bipolar transistor circuits Bipolar transistors Contact resistance Current measurement Design optimization Economic indicators Electrical resistance measurement Electronics Exact sciences and technology Noise measurement Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Testing Transistors Voltage
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Beschreibung
Zusammenfassung:	A new method to determine the base resistance of bipolar transistors under forward-bias conditions is presented. Using special transistor structures, the total base resistance has been directly measured and then separated into its components, the external and internal base resistances. The sheet resistance for the internal base region can be estimated for a base-emitter voltage range of practical interest. An accurate estimation of the base resistance of advanced bipolar transistors under high-forward-bias conditions is demonstrated.< >
ISSN:	0741-3106 1558-0563
DOI:	10.1109/55.144996