A novel power plane with integrated simultaneous switching noise mitigation capability using high impedance surface
A novel technique for suppressing power plane resonance at microwave and radio frequencies is presented. The new concept consists of replacing one of the plates of a parallel power plane pair with a high impedance surface or electromagnetic band gap structure. The combination of this technique with...
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| Veröffentlicht in: | IEEE microwave and wireless components letters 2003-01, Vol.13 (1), p.21-23 |
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| container_end_page | 23 |
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| container_title | IEEE microwave and wireless components letters |
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| creator | Kamgaing, T. Ramahi, O.M. |
| description | A novel technique for suppressing power plane resonance at microwave and radio frequencies is presented. The new concept consists of replacing one of the plates of a parallel power plane pair with a high impedance surface or electromagnetic band gap structure. The combination of this technique with a wall of RC pairs extends the lower edge of the effective bandwidth to dc, and allows resonant mode suppression up to the upper edge of the band-gap. The frequency range for noise mitigation is controlled by the geometry of the HIGP structure. |
| doi_str_mv | 10.1109/LMWC.2002.807713 |
| format | Article |
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The new concept consists of replacing one of the plates of a parallel power plane pair with a high impedance surface or electromagnetic band gap structure. The combination of this technique with a wall of RC pairs extends the lower edge of the effective bandwidth to dc, and allows resonant mode suppression up to the upper edge of the band-gap. 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The new concept consists of replacing one of the plates of a parallel power plane pair with a high impedance surface or electromagnetic band gap structure. The combination of this technique with a wall of RC pairs extends the lower edge of the effective bandwidth to dc, and allows resonant mode suppression up to the upper edge of the band-gap. The frequency range for noise mitigation is controlled by the geometry of the HIGP structure.</description><subject>Active noise reduction</subject><subject>Applied sciences</subject><subject>Capacitors</subject><subject>Circuit noise</subject><subject>Circuit properties</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Joining processes</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Photonic band gap</subject><subject>Radio frequency</subject><subject>Resonance</subject><subject>Semiconductor device noise</subject><subject>Surface impedance</subject><subject>Switches</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkc1r3DAUxE1ooGnaeyEXUWhv3j7JkiUfw5K2gS29BHoUz8rzroK_KskN-e8j40AgJwnmN8NIUxSfOew4h-b74fff_U4AiJ0BrXl1VlxwpUzJdS3frfeKl7yC5n3xIcYHAC6N5BdFvGbj9J96Nk-PFNjc40js0acT82OiY8BE9yz6YelTVqYlsphVd_LjMRt9JDb45I-Y_DQyhzO2vvfpiS1xJU7-mIOGme5xdMTiEjp09LE477CP9OnlvCzuftzc7X-Vhz8_b_fXh9JVskkl5sqmdQBQ80Y6iYqkExUqRW0DutOqJg2t6aASqDvACutOILXa1cR5dVl822LnMP1bKCY7-Oio77eHWGFkI5QRGfzyBnyYljDmatYYKURtGp0h2CAXphgDdXYOfsDwZDnYdQG7LmDXBey2QLZ8fcnF6LDvQv4EH199UnENYi16tXGeiF5lXnOlZfUMOaCQ0A</recordid><startdate>200301</startdate><enddate>200301</enddate><creator>Kamgaing, T.</creator><creator>Ramahi, O.M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The new concept consists of replacing one of the plates of a parallel power plane pair with a high impedance surface or electromagnetic band gap structure. The combination of this technique with a wall of RC pairs extends the lower edge of the effective bandwidth to dc, and allows resonant mode suppression up to the upper edge of the band-gap. The frequency range for noise mitigation is controlled by the geometry of the HIGP structure.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LMWC.2002.807713</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 1531-1309 |
| ispartof | IEEE microwave and wireless components letters, 2003-01, Vol.13 (1), p.21-23 |
| issn | 1531-1309 2771-957X 1558-1764 2771-9588 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28492582 |
| source | IEEE Electronic Library (IEL) |
| subjects | Active noise reduction Applied sciences Capacitors Circuit noise Circuit properties Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Joining processes Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Photonic band gap Radio frequency Resonance Semiconductor device noise Surface impedance Switches |
| title | A novel power plane with integrated simultaneous switching noise mitigation capability using high impedance surface |
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