New results with semiconductor drift chambers for X-ray spectroscopy

Silicon drift detectors have been tested for X-ray Spectroscopy applications. By optimizing the detector-FET connection and using a very low leakage current detector manufacturing process, it has been possible to achieve a very good energy resolution. The resolution and leakage current have been stu...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1994-08, Vol.41 (4), p.1048-1053
Hauptverfasser: Jalas, P., Niemela, A., Chen, W., Rehak, P., Castoldi, A., Longoni, A.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Silicon drift detectors have been tested for X-ray Spectroscopy applications. By optimizing the detector-FET connection and using a very low leakage current detector manufacturing process, it has been possible to achieve a very good energy resolution. The resolution and leakage current have been studied as a function of temperature, from room temperature down to -30/spl deg/C, and as a function of active area. Also the effects influencing the peak to background ratio have been outlined.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.322856