New results with semiconductor drift chambers for X-ray spectroscopy
Silicon drift detectors have been tested for X-ray Spectroscopy applications. By optimizing the detector-FET connection and using a very low leakage current detector manufacturing process, it has been possible to achieve a very good energy resolution. The resolution and leakage current have been stu...
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Veröffentlicht in: | IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1994-08, Vol.41 (4), p.1048-1053 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Silicon drift detectors have been tested for X-ray Spectroscopy applications. By optimizing the detector-FET connection and using a very low leakage current detector manufacturing process, it has been possible to achieve a very good energy resolution. The resolution and leakage current have been studied as a function of temperature, from room temperature down to -30/spl deg/C, and as a function of active area. Also the effects influencing the peak to background ratio have been outlined.< > |
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ISSN: | 0018-9499 1558-1578 |
DOI: | 10.1109/23.322856 |