A universal large/small signal 3-terminal FET model using a nonquasistatic charge-based approach

Introduces a charge-based nonquasistatic large/small signal FET model that is extracted from measured small signal S-parameter and DC data and can be applied to an arbitrary three-terminal FET structure. The model is based on general physical principles, and provides consistent topologies for both l...

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Veröffentlicht in:	IEEE transactions on electron devices 1993-10, Vol.40 (10), p.1723-1729
Hauptverfasser:	Daniels, R.R., Yang, A.T., Harrang, J.P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuit simulation Computational modeling Current measurement Data mining FETs Frequency Predictive models Spline Topology Voltage
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