An experimental 220-MHz 1-Gb DRAM with a distributed-column-control architecture

A distributed-column-control architecture is proposed to reduce the burst-mode cycle time of large-capacity DRAMs. It features independent operation of the I/O block and subarrays, eliminating the wiring delay in the internal buses from the longest pipeline stage. The timing difference between the I...

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Veröffentlicht in:IEEE journal of solid-state circuits 1995-11, Vol.30 (11), p.1165-1173, Article 1165
Hauptverfasser: Sakata, T., Horiguchi, M., Sekiguchi, T., Ueda, S., Tanaka, H., Yamasaki, E., Nakagome, Y., Aoki, M., Kaga, T., Ohkura, M., Nagai, R., Murai, F., Tanaka, T., Iijima, S., Yokoyama, N., Gotoh, Y., Shoji, I., Kisu, T., Yamashita, H., Nishida, T., Takeda, E.
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container_end_page 1173
container_issue 11
container_start_page 1165
container_title IEEE journal of solid-state circuits
container_volume 30
creator Sakata, T.
Horiguchi, M.
Sekiguchi, T.
Ueda, S.
Tanaka, H.
Yamasaki, E.
Nakagome, Y.
Aoki, M.
Kaga, T.
Ohkura, M.
Nagai, R.
Murai, F.
Tanaka, T.
Iijima, S.
Yokoyama, N.
Gotoh, Y.
Shoji, I.
Kisu, T.
Yamashita, H.
Nishida, T.
Takeda, E.
description A distributed-column-control architecture is proposed to reduce the burst-mode cycle time of large-capacity DRAMs. It features independent operation of the I/O block and subarrays, eliminating the wiring delay in the internal buses from the longest pipeline stage. The timing difference between the I/O block and the subarrays is compensated for by event-driven circuits. This architecture also eliminates the timing margin between the activation of column selection lines, reducing the cycle time by 25%. To evaluate this architecture, an experimental synchronously operating 1-Gb DRAM was designed and fabricated using a 0.16-/spl mu/m CMOS process. It operates with a 22O-MHz clock and a 1.5-V power supply.
doi_str_mv 10.1109/4.475703
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source IEEE Electronic Library (IEL)
subjects Circuits
Clocks
Delay
Frequency
Graphics
HDTV
Pipelines
Random access memory
Timing
Wiring
title An experimental 220-MHz 1-Gb DRAM with a distributed-column-control architecture
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