An experimental 220-MHz 1-Gb DRAM with a distributed-column-control architecture

A distributed-column-control architecture is proposed to reduce the burst-mode cycle time of large-capacity DRAMs. It features independent operation of the I/O block and subarrays, eliminating the wiring delay in the internal buses from the longest pipeline stage. The timing difference between the I...

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Veröffentlicht in:IEEE journal of solid-state circuits 1995-11, Vol.30 (11), p.1165-1173, Article 1165
Hauptverfasser: Sakata, T., Horiguchi, M., Sekiguchi, T., Ueda, S., Tanaka, H., Yamasaki, E., Nakagome, Y., Aoki, M., Kaga, T., Ohkura, M., Nagai, R., Murai, F., Tanaka, T., Iijima, S., Yokoyama, N., Gotoh, Y., Shoji, I., Kisu, T., Yamashita, H., Nishida, T., Takeda, E.
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Sprache:eng
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Zusammenfassung:A distributed-column-control architecture is proposed to reduce the burst-mode cycle time of large-capacity DRAMs. It features independent operation of the I/O block and subarrays, eliminating the wiring delay in the internal buses from the longest pipeline stage. The timing difference between the I/O block and the subarrays is compensated for by event-driven circuits. This architecture also eliminates the timing margin between the activation of column selection lines, reducing the cycle time by 25%. To evaluate this architecture, an experimental synchronously operating 1-Gb DRAM was designed and fabricated using a 0.16-/spl mu/m CMOS process. It operates with a 22O-MHz clock and a 1.5-V power supply.
ISSN:0018-9200
1558-173X
DOI:10.1109/4.475703