Approaching Ohmic Contacts for Ideal Monolayer MoS2 Transistors Through Sulfur-Vacancy Engineering

Field-effect transistors (FETs) made of monolayer 2D semiconductors (e.g., MoS2 ) are among the basis of the future modern wafer chip industry. However, unusually high contact resistances at the metal-semiconductor interfaces have seriously limited the improvement of monolayer 2D semiconductor FETs...

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Veröffentlicht in:	Small methods 2023-11, Vol.7 (11), p.e2300611-e2300611
Hauptverfasser:	Xiao, Jiankun, Chen, Kuanglei, Zhang, Xiankun, Liu, Xiaozhi, Yu, Huihui, Gao, Li, Hong, Mengyu, Gu, Lin, Zhang, Zheng, Zhang, Yue
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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