Inverted spin valves with IrMn biasing layer

Inverted IrMn-based spin valves (ISV) were fabricated with the aim of low thickness/high output dual spin valve applications. Optimized structures exhibit the following characteristics: H/sub exch/=750 Oe, R/sub sq./=18.5 /spl Omega//sq., /spl Delta/R/R=7.5% and T/sub b/=250/spl deg/C with IrMn thic...

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Veröffentlicht in:	IEEE transactions on magnetics 2000-09, Vol.36 (5), p.2626-2628
Hauptverfasser:	Zeltser, A.M., Pentek, K., van der Heijden, P.A.A., Chin, T.K., Blank, H.-R., Zhang, Y.B., Trotter, S., Speriosu, V.S., Jaren, S., Nozieres, J.P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Acceleration Applied sciences Electronics Engineering Sciences Exact sciences and technology Heating Iron Legged locomotion Magnetic devices Magnetic heads Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.) domain-motion devices, etc Magnetism Magnetoresistance Magnetostriction Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Spin valves Temperature distribution Thermal stability
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Beschreibung
Zusammenfassung:	Inverted IrMn-based spin valves (ISV) were fabricated with the aim of low thickness/high output dual spin valve applications. Optimized structures exhibit the following characteristics: H/sub exch/=750 Oe, R/sub sq./=18.5 /spl Omega//sq., /spl Delta/R/R=7.5% and T/sub b/=250/spl deg/C with IrMn thickness as low as 75 A. The blocking temperature distribution, however, exhibits nonzero components from 150/spl deg/C onwards. Accordingly, accelerated sheet films lifetime experiments and current heating on full read/write heads show that partial rotations of the pinned layer occur well below T/sub b/. These structures therefore appear to be insufficiently stable for disk-drive applications.
ISSN:	0018-9464 1941-0069
DOI:	10.1109/20.908538