Crystallization of silicon films by rapid joule heating method

We report on the crystallization of silicon films by the joule heating method using Cr strip heater. We report on the lateral crystalline grain growth of silicon thin films by induced holes fabricated in Cr strip. A temperature gradient is generated by the holes, which causes lateral crystalline gra...

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Veröffentlicht in:	Thin solid films 2005-09, Vol.487 (1), p.118-121
Hauptverfasser:	Andoh, Nobuyuki, Sameshima, Toshiyuki, Kitahara, Kuninori
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Joule heating Lateral crystalline growth Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Physics Rapid heating Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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Beschreibung
Zusammenfassung:	We report on the crystallization of silicon films by the joule heating method using Cr strip heater. We report on the lateral crystalline grain growth of silicon thin films by induced holes fabricated in Cr strip. A temperature gradient is generated by the holes, which causes lateral crystalline grain growth. The duration of the electrical current flow in the Cr strip heater is 5 μs. The crystallization experiment is evaluated by Raman scattering spectra in particular by analyzing the sharp crystalline TO phonon peak around 517 cm −1.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2005.01.084