A novel β-SiC/Si heterojunction backward diode

In this letter, a novel beta-SiC/Si heterojunction backward diode has been developed successfully. The developed new backward diode is somewhat different from a conventional one. The beta-SiC thin film was grown by a low pressure rapid thermal chemical vapor deposition (LP-RTCVD) using a SiH(4)-C(3)...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE electron device letters 1995-05, Vol.16 (5), p.193-195
Hauptverfasser:	HWANG, J. D, FANG, Y. K, CHEN, K. H, YAUNG, D. N
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Diodes Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	In this letter, a novel beta-SiC/Si heterojunction backward diode has been developed successfully. The developed new backward diode is somewhat different from a conventional one. The beta-SiC thin film was grown by a low pressure rapid thermal chemical vapor deposition (LP-RTCVD) using a SiH(4)-C(3)H(8)-H(2 ) gas system. Its current-voltage characteristics under different operation temperatures (25-200 deg C) have been measured. In addition, the curvature coefficient gamma has also been calculated and it is found to be insensitive to temperature variation up to 180 deg C. The operation temperature is the highest reported thus far, to our knowledge
ISSN:	0741-3106 1558-0563
DOI:	10.1109/55.382237