A novel MESFET fabricated by a simple internal interconnection technique
A new type of internal interconnection of devices has been developed by implanting a buried horizontal n/sup +/ layer and vertical n/sup +/ columns inside semi-insulating GaAs. Based on this technique, a novel MESFET with small intrinsic gate-source resistance has been fabricated and tested.< >...
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| Veröffentlicht in: | IEEE transactions on electron devices 1995-02, Vol.42 (2), p.370-372 |
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| container_end_page | 372 |
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| container_issue | 2 |
| container_start_page | 370 |
| container_title | IEEE transactions on electron devices |
| container_volume | 42 |
| creator | Han Dejun Chan, K.T. Li GuoHui Wang WenXun En-Jun Zhu |
| description | A new type of internal interconnection of devices has been developed by implanting a buried horizontal n/sup +/ layer and vertical n/sup +/ columns inside semi-insulating GaAs. Based on this technique, a novel MESFET with small intrinsic gate-source resistance has been fabricated and tested.< > |
| doi_str_mv | 10.1109/16.370051 |
| format | Article |
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Based on this technique, a novel MESFET with small intrinsic gate-source resistance has been fabricated and tested.< ></description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>Gallium arsenide</subject><subject>Implants</subject><subject>Integrated circuit interconnections</subject><subject>Integrated circuit technology</subject><subject>MESFETs</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Substrates</topic><topic>Testing</topic><topic>Transistors</topic><topic>Tungsten</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Han Dejun</creatorcontrib><creatorcontrib>Chan, K.T.</creatorcontrib><creatorcontrib>Li GuoHui</creatorcontrib><creatorcontrib>Wang WenXun</creatorcontrib><creatorcontrib>En-Jun Zhu</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Han Dejun</au><au>Chan, K.T.</au><au>Li GuoHui</au><au>Wang WenXun</au><au>En-Jun Zhu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A novel MESFET fabricated by a simple internal interconnection technique</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1995-02-01</date><risdate>1995</risdate><volume>42</volume><issue>2</issue><spage>370</spage><epage>372</epage><pages>370-372</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A new type of internal interconnection of devices has been developed by implanting a buried horizontal n/sup +/ layer and vertical n/sup +/ columns inside semi-insulating GaAs. Based on this technique, a novel MESFET with small intrinsic gate-source resistance has been fabricated and tested.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/16.370051</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 1995-02, Vol.42 (2), p.370-372 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28453826 |
| source | IEEE |
| subjects | Applied sciences Electronics Etching Exact sciences and technology Fabrication Gallium arsenide Implants Integrated circuit interconnections Integrated circuit technology MESFETs Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates Testing Transistors Tungsten |
| title | A novel MESFET fabricated by a simple internal interconnection technique |
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