A novel MESFET fabricated by a simple internal interconnection technique

A novel MESFET fabricated by a simple internal interconnection technique

A new type of internal interconnection of devices has been developed by implanting a buried horizontal n/sup +/ layer and vertical n/sup +/ columns inside semi-insulating GaAs. Based on this technique, a novel MESFET with small intrinsic gate-source resistance has been fabricated and tested.< >...

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Veröffentlicht in:IEEE transactions on electron devices 1995-02, Vol.42 (2), p.370-372
Hauptverfasser: Han Dejun, Chan, K.T., Li GuoHui, Wang WenXun, En-Jun Zhu
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Etching
Exact sciences and technology
Fabrication
Gallium arsenide
Implants
Integrated circuit interconnections
Integrated circuit technology
MESFETs
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Substrates
Testing
Transistors
Tungsten
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Beschreibung
Zusammenfassung:A new type of internal interconnection of devices has been developed by implanting a buried horizontal n/sup +/ layer and vertical n/sup +/ columns inside semi-insulating GaAs. Based on this technique, a novel MESFET with small intrinsic gate-source resistance has been fabricated and tested.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.370051