Analysis of surface-induced degradation of GaAs power MESFET's
Long-term degradation of GaAs power MESFET's is shown to be surface induced. Using micro-Auger analysis (beam spot size ≃0.1-0.2 µm), we have identified a gallium outdiffusion induced by the SiO 2 surface protection deposition and a GaAs oxidation mechanism during electrical operation. These re...
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| Veröffentlicht in: | IEEE electron device letters 1985-04, Vol.6 (4), p.192-194 |
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| container_title | IEEE electron device letters |
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| creator | Dumas, J.M. Lecrosnier, D. Bresse, J.F. |
| description | Long-term degradation of GaAs power MESFET's is shown to be surface induced. Using micro-Auger analysis (beam spot size ≃0.1-0.2 µm), we have identified a gallium outdiffusion induced by the SiO 2 surface protection deposition and a GaAs oxidation mechanism during electrical operation. These reactions modify the electrical surface properties in the access regions explaining the RF and dc performances degradation. |
| doi_str_mv | 10.1109/EDL.1985.26093 |
| format | Article |
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Using micro-Auger analysis (beam spot size ≃0.1-0.2 µm), we have identified a gallium outdiffusion induced by the SiO 2 surface protection deposition and a GaAs oxidation mechanism during electrical operation. These reactions modify the electrical surface properties in the access regions explaining the RF and dc performances degradation.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/EDL.1985.26093</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Aging ; Applied sciences ; Current measurement ; Degradation ; Electronics ; Exact sciences and technology ; Gain measurement ; Gallium arsenide ; Life testing ; Manufacturing ; MESFETs ; Power measurement ; Radiofrequency identification ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>IEEE electron device letters, 1985-04, Vol.6 (4), p.192-194</ispartof><rights>1986 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c414t-2197c752ad74122046d6de2461e759d69ca476a96a446de5cf9f3b81a57d9bb23</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1485246$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1485246$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8547636$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Dumas, J.M.</creatorcontrib><creatorcontrib>Lecrosnier, D.</creatorcontrib><creatorcontrib>Bresse, J.F.</creatorcontrib><title>Analysis of surface-induced degradation of GaAs power MESFET's</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Long-term degradation of GaAs power MESFET's is shown to be surface induced. Using micro-Auger analysis (beam spot size ≃0.1-0.2 µm), we have identified a gallium outdiffusion induced by the SiO 2 surface protection deposition and a GaAs oxidation mechanism during electrical operation. These reactions modify the electrical surface properties in the access regions explaining the RF and dc performances degradation.</description><subject>Aging</subject><subject>Applied sciences</subject><subject>Current measurement</subject><subject>Degradation</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gain measurement</subject><subject>Gallium arsenide</subject><subject>Life testing</subject><subject>Manufacturing</subject><subject>MESFETs</subject><subject>Power measurement</subject><subject>Radiofrequency identification</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1985</creationdate><recordtype>article</recordtype><recordid>eNqNkL1LA0EQxRdRMEZbG5srRKuL-323jRBijELEQq2Xye6cnFzu4m4OyX_vxgRtrQZmfu8x7xFyzuiIMWpupnfzETOlGnFNjTggA6ZUmVOlxSEZ0EKyXDCqj8lJjB-UMikLOSC34xaaTaxj1lVZ7EMFDvO69b1Dn3l8D-BhXXft9jyDccxW3ReG7Gn6cj99vY6n5KiCJuLZfg7JW9pPHvL58-xxMp7nTjK5zjkzhSsUB5_e4JxK7bVHLjXDQhmvjQNZaDAaZDqhcpWpxKJkoApvFgsuhuRq57sK3WePcW2XdXTYNNBi10fLy5IbZcQ_QCmFMCqBox3oQhdjwMquQr2EsLGM2m2fNvVpt33anz6T4HLvDNFBUwVoXR1_VaVKCYRO2MUOqxHxz1OWKsUV36gIe2c</recordid><startdate>19850401</startdate><enddate>19850401</enddate><creator>Dumas, J.M.</creator><creator>Lecrosnier, D.</creator><creator>Bresse, J.F.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>JG9</scope></search><sort><creationdate>19850401</creationdate><title>Analysis of surface-induced degradation of GaAs power MESFET's</title><author>Dumas, J.M. ; Lecrosnier, D. ; Bresse, J.F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c414t-2197c752ad74122046d6de2461e759d69ca476a96a446de5cf9f3b81a57d9bb23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1985</creationdate><topic>Aging</topic><topic>Applied sciences</topic><topic>Current measurement</topic><topic>Degradation</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gain measurement</topic><topic>Gallium arsenide</topic><topic>Life testing</topic><topic>Manufacturing</topic><topic>MESFETs</topic><topic>Power measurement</topic><topic>Radiofrequency identification</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dumas, J.M.</creatorcontrib><creatorcontrib>Lecrosnier, D.</creatorcontrib><creatorcontrib>Bresse, J.F.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>Materials Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Dumas, J.M.</au><au>Lecrosnier, D.</au><au>Bresse, J.F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analysis of surface-induced degradation of GaAs power MESFET's</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1985-04-01</date><risdate>1985</risdate><volume>6</volume><issue>4</issue><spage>192</spage><epage>194</epage><pages>192-194</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Long-term degradation of GaAs power MESFET's is shown to be surface induced. Using micro-Auger analysis (beam spot size ≃0.1-0.2 µm), we have identified a gallium outdiffusion induced by the SiO 2 surface protection deposition and a GaAs oxidation mechanism during electrical operation. These reactions modify the electrical surface properties in the access regions explaining the RF and dc performances degradation.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/EDL.1985.26093</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1985-04, Vol.6 (4), p.192-194 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28443395 |
| source | IEEE Electronic Library (IEL) |
| subjects | Aging Applied sciences Current measurement Degradation Electronics Exact sciences and technology Gain measurement Gallium arsenide Life testing Manufacturing MESFETs Power measurement Radiofrequency identification Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Analysis of surface-induced degradation of GaAs power MESFET's |
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