Analysis of surface-induced degradation of GaAs power MESFET's

Analysis of surface-induced degradation of GaAs power MESFET's

Long-term degradation of GaAs power MESFET's is shown to be surface induced. Using micro-Auger analysis (beam spot size ≃0.1-0.2 µm), we have identified a gallium outdiffusion induced by the SiO 2 surface protection deposition and a GaAs oxidation mechanism during electrical operation. These re...

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Veröffentlicht in:IEEE electron device letters 1985-04, Vol.6 (4), p.192-194
Hauptverfasser: Dumas, J.M., Lecrosnier, D., Bresse, J.F.
Format: Artikel
Sprache:eng
Schlagworte:
Aging
Applied sciences
Current measurement
Degradation
Electronics
Exact sciences and technology
Gain measurement
Gallium arsenide
Life testing
Manufacturing
MESFETs
Power measurement
Radiofrequency identification
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Beschreibung
Zusammenfassung:Long-term degradation of GaAs power MESFET's is shown to be surface induced. Using micro-Auger analysis (beam spot size ≃0.1-0.2 µm), we have identified a gallium outdiffusion induced by the SiO 2 surface protection deposition and a GaAs oxidation mechanism during electrical operation. These reactions modify the electrical surface properties in the access regions explaining the RF and dc performances degradation.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1985.26093