Noise temperature in GaAs epi-layer for FET's

The noise temperature field-dependent relationship was experimentally investigated in thin GaAs epi-layer. It was found that the commonly used relationship is inaccurate for most of the devices. A new relationship of extended, validity was derived in the lattice temperature 90-370 K.

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on electron devices 1978-06, Vol.25 (6), p.596-599
Hauptverfasser:	Graffeuil, J., Sautereau, J.-F., Blasquez, G., Rossel, P.
Format:	Artikel
Sprache:	eng
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Beschreibung
Zusammenfassung:	The noise temperature field-dependent relationship was experimentally investigated in thin GaAs epi-layer. It was found that the commonly used relationship is inaccurate for most of the devices. A new relationship of extended, validity was derived in the lattice temperature 90-370 K.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/T-ED.1978.19142