Integrated sensor and electronic circuits in fully depleted SOI technology for high-temperature applications

Integrated sensor and electronic circuits in fully depleted SOI technology for high-temperature applications

The electrical characteristics of devices and circuits realized in CMOS technology on silicon-on-insulator (SOI) substrates and operated at elevated temperatures are presented and compared with results obtained using other materials (bulk Si, GaAs, SiC). It is demonstrated that fully depleted CMOS o...

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Veröffentlicht in:IEEE transactions on industrial electronics (1982) 2001-04, Vol.48 (2), p.272-280
Hauptverfasser: Demeus, L., Dessard, V., Viviani, A., Adriaensen, S., Flandre, D.
Format: Artikel
Sprache:eng
Schlagworte:
Circuits
CMOS
CMOS process
CMOS technology
Depletion
Electric circuits
Electric variables
Electronic circuits
Gallium arsenide
Integrated circuit technology
Sensor phenomena and characterization
Silicon carbide
Silicon on insulator technology
Silicon substrates
Temperature sensors
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Zusammenfassung:The electrical characteristics of devices and circuits realized in CMOS technology on silicon-on-insulator (SOI) substrates and operated at elevated temperatures are presented and compared with results obtained using other materials (bulk Si, GaAs, SiC). It is demonstrated that fully depleted CMOS on SOI is the most suitable process for the realization of complex electronic circuits to be operated in high-temperature environments, up to more than 300/spl deg/C.
ISSN:0278-0046
1557-9948
DOI:10.1109/41.915405