An ultrahigh-speed GaAs MESFET operational amplifier

A wide-bandwidth GaAs MESFET operational amplifier is reported, with a 65-dB DC gain and a 20-GHz gain-bandwidth product at 500 MHz. The circuit uses a variety of local feedback techniques to enhance the overall gain. The use of an undoped GaAs buffer, grown at a relatively low temperature ( approxi...

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Veröffentlicht in:	IEEE journal of solid-state circuits 1989-12, Vol.24 (6), p.1523-1528
Hauptverfasser:	Larson, L.E., Chou, C.-S., Delaney, M.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Applied sciences Broadband amplifiers Circuit noise Circuit properties Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Feedback circuits Frequency Gallium arsenide MESFET circuits Noise level Operational amplifiers Temperature sensors Voltage
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