An ultrahigh-speed GaAs MESFET operational amplifier

An ultrahigh-speed GaAs MESFET operational amplifier

A wide-bandwidth GaAs MESFET operational amplifier is reported, with a 65-dB DC gain and a 20-GHz gain-bandwidth product at 500 MHz. The circuit uses a variety of local feedback techniques to enhance the overall gain. The use of an undoped GaAs buffer, grown at a relatively low temperature ( approxi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE journal of solid-state circuits 1989-12, Vol.24 (6), p.1523-1528
Hauptverfasser: Larson, L.E., Chou, C.-S., Delaney, M.J.
Format: Artikel
Sprache:eng
Schlagworte:
Amplifiers
Applied sciences
Broadband amplifiers
Circuit noise
Circuit properties
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Feedback circuits
Frequency
Gallium arsenide
MESFET circuits
Noise level
Operational amplifiers
Temperature sensors
Voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A wide-bandwidth GaAs MESFET operational amplifier is reported, with a 65-dB DC gain and a 20-GHz gain-bandwidth product at 500 MHz. The circuit uses a variety of local feedback techniques to enhance the overall gain. The use of an undoped GaAs buffer, grown at a relatively low temperature ( approximately=300 degrees C), eliminates backgating and light sensitivity. The circuit was fabricated in an 80-GHz f/sub T/ MESFET process, with 0.2- mu m electron-beam defined gates. The high levels of 1/f noise, MESFET frequency-dependent output conductance, and large offset voltage standard deviation limit the application of the circuit to moderate precision applications.< >
ISSN:0018-9200
1558-173X
DOI:10.1109/4.44988