An ultrahigh-speed GaAs MESFET operational amplifier
A wide-bandwidth GaAs MESFET operational amplifier is reported, with a 65-dB DC gain and a 20-GHz gain-bandwidth product at 500 MHz. The circuit uses a variety of local feedback techniques to enhance the overall gain. The use of an undoped GaAs buffer, grown at a relatively low temperature ( approxi...
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| Veröffentlicht in: | IEEE journal of solid-state circuits 1989-12, Vol.24 (6), p.1523-1528 |
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| container_end_page | 1528 |
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| container_issue | 6 |
| container_start_page | 1523 |
| container_title | IEEE journal of solid-state circuits |
| container_volume | 24 |
| creator | Larson, L.E. Chou, C.-S. Delaney, M.J. |
| description | A wide-bandwidth GaAs MESFET operational amplifier is reported, with a 65-dB DC gain and a 20-GHz gain-bandwidth product at 500 MHz. The circuit uses a variety of local feedback techniques to enhance the overall gain. The use of an undoped GaAs buffer, grown at a relatively low temperature ( approximately=300 degrees C), eliminates backgating and light sensitivity. The circuit was fabricated in an 80-GHz f/sub T/ MESFET process, with 0.2- mu m electron-beam defined gates. The high levels of 1/f noise, MESFET frequency-dependent output conductance, and large offset voltage standard deviation limit the application of the circuit to moderate precision applications.< > |
| doi_str_mv | 10.1109/4.44988 |
| format | Article |
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The circuit uses a variety of local feedback techniques to enhance the overall gain. The use of an undoped GaAs buffer, grown at a relatively low temperature ( approximately=300 degrees C), eliminates backgating and light sensitivity. The circuit was fabricated in an 80-GHz f/sub T/ MESFET process, with 0.2- mu m electron-beam defined gates. The high levels of 1/f noise, MESFET frequency-dependent output conductance, and large offset voltage standard deviation limit the application of the circuit to moderate precision applications.< ></description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/4.44988</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amplifiers ; Applied sciences ; Broadband amplifiers ; Circuit noise ; Circuit properties ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Feedback circuits ; Frequency ; Gallium arsenide ; MESFET circuits ; Noise level ; Operational amplifiers ; Temperature sensors ; Voltage</subject><ispartof>IEEE journal of solid-state circuits, 1989-12, Vol.24 (6), p.1523-1528</ispartof><rights>1990 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c332t-7b61f940a65a8debb7186e1f389c0b4922b3aca7d764583373c2bfbbba8f41b3</citedby><cites>FETCH-LOGICAL-c332t-7b61f940a65a8debb7186e1f389c0b4922b3aca7d764583373c2bfbbba8f41b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/44988$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/44988$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=6738784$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Larson, L.E.</creatorcontrib><creatorcontrib>Chou, C.-S.</creatorcontrib><creatorcontrib>Delaney, M.J.</creatorcontrib><title>An ultrahigh-speed GaAs MESFET operational amplifier</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>A wide-bandwidth GaAs MESFET operational amplifier is reported, with a 65-dB DC gain and a 20-GHz gain-bandwidth product at 500 MHz. The circuit uses a variety of local feedback techniques to enhance the overall gain. The use of an undoped GaAs buffer, grown at a relatively low temperature ( approximately=300 degrees C), eliminates backgating and light sensitivity. The circuit was fabricated in an 80-GHz f/sub T/ MESFET process, with 0.2- mu m electron-beam defined gates. The high levels of 1/f noise, MESFET frequency-dependent output conductance, and large offset voltage standard deviation limit the application of the circuit to moderate precision applications.< ></description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Broadband amplifiers</subject><subject>Circuit noise</subject><subject>Circuit properties</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Feedback circuits</subject><subject>Frequency</subject><subject>Gallium arsenide</subject><subject>MESFET circuits</subject><subject>Noise level</subject><subject>Operational amplifiers</subject><subject>Temperature sensors</subject><subject>Voltage</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNqF0DFPwzAQBWALgUQJiJktA4IpxY6d2B6rqhSkIgY6sFln16ZGbhLsdODfE0jVlel0uk_vpIfQNcFTQrB8YFPGpBAnaEKqShSE0_dTNMGYiEKWGJ-ji5Q-h5UxQSaIzZp8H_oIW_-xLVJn7SZfwizlL4u3x8U6bzsbofdtAyGHXRe88zZeojMHIdmrw8zQerDzp2L1unyez1aFobTsC65r4iTDUFcgNlZrTkRtiaNCGqyZLEtNwQDf8JpVglJOTamd1hqEY0TTDN2NsV1sv_Y29Wrnk7EhQGPbfVKlYBRLKv-HFcWCSDzA-xGa2KYUrVNd9DuI34pg9dueYuqvvUHeHiIhGQguQmN8OvKaU8GH9xm6GZm31h6vY8QP-MR0tg</recordid><startdate>19891201</startdate><enddate>19891201</enddate><creator>Larson, L.E.</creator><creator>Chou, C.-S.</creator><creator>Delaney, M.J.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope></search><sort><creationdate>19891201</creationdate><title>An ultrahigh-speed GaAs MESFET operational amplifier</title><author>Larson, L.E. ; Chou, C.-S. ; Delaney, M.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c332t-7b61f940a65a8debb7186e1f389c0b4922b3aca7d764583373c2bfbbba8f41b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Broadband amplifiers</topic><topic>Circuit noise</topic><topic>Circuit properties</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Feedback circuits</topic><topic>Frequency</topic><topic>Gallium arsenide</topic><topic>MESFET circuits</topic><topic>Noise level</topic><topic>Operational amplifiers</topic><topic>Temperature sensors</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Larson, L.E.</creatorcontrib><creatorcontrib>Chou, C.-S.</creatorcontrib><creatorcontrib>Delaney, M.J.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Larson, L.E.</au><au>Chou, C.-S.</au><au>Delaney, M.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An ultrahigh-speed GaAs MESFET operational amplifier</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>1989-12-01</date><risdate>1989</risdate><volume>24</volume><issue>6</issue><spage>1523</spage><epage>1528</epage><pages>1523-1528</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>A wide-bandwidth GaAs MESFET operational amplifier is reported, with a 65-dB DC gain and a 20-GHz gain-bandwidth product at 500 MHz. The circuit uses a variety of local feedback techniques to enhance the overall gain. The use of an undoped GaAs buffer, grown at a relatively low temperature ( approximately=300 degrees C), eliminates backgating and light sensitivity. The circuit was fabricated in an 80-GHz f/sub T/ MESFET process, with 0.2- mu m electron-beam defined gates. The high levels of 1/f noise, MESFET frequency-dependent output conductance, and large offset voltage standard deviation limit the application of the circuit to moderate precision applications.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/4.44988</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0018-9200 |
| ispartof | IEEE journal of solid-state circuits, 1989-12, Vol.24 (6), p.1523-1528 |
| issn | 0018-9200 1558-173X |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28430939 |
| source | IEEE Electronic Library (IEL) |
| subjects | Amplifiers Applied sciences Broadband amplifiers Circuit noise Circuit properties Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Feedback circuits Frequency Gallium arsenide MESFET circuits Noise level Operational amplifiers Temperature sensors Voltage |
| title | An ultrahigh-speed GaAs MESFET operational amplifier |
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