Injection Laser Modulation At 2 Gbit/s by Monolithic Silicon Multiplexer

Injection Laser Modulation At 2 Gbit/s by Monolithic Silicon Multiplexer

Direct laser-diode pulse-code modulation at 2 Gbit/s (NRZ) is performed by a fast Si monolithic integrated bipolar circuit (2.5-µm design rules, p-n-junction isolation, f/sub 1/ /spl ap/ 7 GHz at V/sub CE/=1 V). The current-switch output stage of a 4:1-time-division multiplexer IC feeds a modulation...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1984-12, Vol.32 (12), p.1675-1677
Hauptverfasser: Langmann, U., Daniel, D., Bosch, B.G.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Bipolar integrated circuits
Exact sciences and technology
Feeds
Fundamental areas of phenomenology (including applications)
Lasers
Monolithic integrated circuits
Multiplexing
Optical design
Optical pulses
Optical signal processing
Optics
Other techniques and industries
Physics
Pulse circuits
Pulse modulation
Semiconductor lasers
laser diodes
Silicon
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Beschreibung
Zusammenfassung:Direct laser-diode pulse-code modulation at 2 Gbit/s (NRZ) is performed by a fast Si monolithic integrated bipolar circuit (2.5-µm design rules, p-n-junction isolation, f/sub 1/ /spl ap/ 7 GHz at V/sub CE/=1 V). The current-switch output stage of a 4:1-time-division multiplexer IC feeds a modulation current swing of 8 mA into a CSP injection laser biased above threshold. Measured optical responses of the laser are reported.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1984.1132925