Ion beam deposition of Mn-Ir spin valves

Half-biased spin valves have been prepared by ion beam deposition. The magnetoresistance (MR) signal reaches 7.7% and the exchange field is 350 Oe with a coupling field of 15 Oe and a coercivity of the free layer equal to 4 Oe. The [111] texture induced by a very thin Ta buffer layer (thickness

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on magnetics 1999-09, Vol.35 (5), p.4361-4367
Hauptverfasser:	Gehanno, V., Freitas, P.P., Veloso, A., Ferrira, J., Almeida, B., Soasa, J.B., Kling, A., Soares, J.C., da Silva, M.F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied sciences Buffer layers Coercive force Condensed matter: electronic structure, electrical, magnetic, and optical properties Couplings Exact sciences and technology Ion beams Magnetic properties and materials Magnetic properties of monolayers and thin films Magnetic properties of surface, thin films and multilayers Magnetoresistance Metals. Metallurgy Physics Spin valves Sputtering Temperature Thermal stability
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Beschreibung
Zusammenfassung:	Half-biased spin valves have been prepared by ion beam deposition. The magnetoresistance (MR) signal reaches 7.7% and the exchange field is 350 Oe with a coupling field of 15 Oe and a coercivity of the free layer equal to 4 Oe. The [111] texture induced by a very thin Ta buffer layer (thickness
ISSN:	0018-9464 1941-0069
DOI:	10.1109/20.799086