Influence of temperature and optical confinement on threshold current of an InGaAs/InP quantum wire laser

Influence of temperature and optical confinement on threshold current of an InGaAs/InP quantum wire laser

In this paper, we investigate the influence of the temperature on gain and threshold current density of a V-groove quantum wire InGaAs/InP laser. The calculation shows that room-temperature operation can be achieved if the optical confinement is large enough (0.26% in our case), while its slight imp...

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Veröffentlicht in:IEEE journal of selected topics in quantum electronics 2003-05, Vol.9 (3), p.732-735
Hauptverfasser: Gvozdic, D.M., Schlachetzki, A.
Format: Artikel
Sprache:eng
Schlagworte:
Confinement
Density
Indium gallium arsenide
Indium gallium arsenides
Indium phosphide
Indium phosphides
Lasers
Mathematical analysis
Optical materials
Optical sensors
Quantum dot lasers
Quantum well lasers
Quantum wires
Surface emitting lasers
Temperature sensors
Threshold current
Threshold currents
Wire
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Beschreibung
Zusammenfassung:In this paper, we investigate the influence of the temperature on gain and threshold current density of a V-groove quantum wire InGaAs/InP laser. The calculation shows that room-temperature operation can be achieved if the optical confinement is large enough (0.26% in our case), while its slight improvement above this limit (around 0.4%) can provide a significant reduction of the threshold current (more than 70%) and an improved temperature stability of the laser.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2003.818857