Measurement of intrinsic gate capacitances of SOI MOSFET's

The measurement of intrinsic gate-to-source capacitances of SOI n-MOSFETs at low drain-to-source voltage drop is discussed. Differences with classical bulk characteristics are explained in strong inversion as well as in subthreshold operation. The capacitance technique seems to offer a valuable tool for the characterization of SOI MOSFETs, supplementing static I-V measurements, since it allows the extraction, on the same device, of the front flatband voltage and of the front threshold voltage for inverted back interface. The results clearly show that the source and drain junction capacitances should be incorporated in small- and large-signal models of SOI MOSFETs.< >