The dielectric function of a GaAs/AlGaAs single quantum well: calculation and comparison with experiment

The dielectric function (DF) of a modulation doped (0 0 1) GaAs/AlGaAs (Al content of x=0.33) single quantum well structure containing a two-dimensional electron gas (2DEG) was calculated as a function of 2DEG density and temperature, taking into account the nonparabolicity of the valence band and m...

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Veröffentlicht in:	Thin solid films 2004-02, Vol.450 (1), p.199-202
Hauptverfasser:	Herasimovich, A., Shokhovets, S., Goldhahn, R., Gobsch, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Dielectric function Dielectric properties of solids and liquids Dielectrics, piezoelectrics, and ferroelectrics and their properties Electroreflectance Exact sciences and technology Iii-v semiconductors Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Permittivity (dielectric function) Photoluminescence Photoluminescence excitation Physics Semiconductors Two-dimensional electron gas Visible and ultraviolet spectra
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Zusammenfassung:	The dielectric function (DF) of a modulation doped (0 0 1) GaAs/AlGaAs (Al content of x=0.33) single quantum well structure containing a two-dimensional electron gas (2DEG) was calculated as a function of 2DEG density and temperature, taking into account the nonparabolicity of the valence band and many-body effects. The DF was used to simulate electroreflectance and photoluminescence excitation spectra. The results were found to be in a good agreement with experimental data at T>80 K and 2DEG concentrations of more than 2×10 11 cm −2.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2003.10.072