MISNAN-a physically based continuous MOSFET model for CAD applications
A circuit-level MOSFET model is presented which is based on the representation of current transport in a sheet channel in terms of the surface potential conditions at the source and drain boundaries. It is established that the surface potential solutions can be obtained by iterative means with negli...
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| Veröffentlicht in: | IEEE transactions on computer-aided design of integrated circuits and systems 1991-12, Vol.10 (12), p.1512-1529 |
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| container_end_page | 1529 |
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| container_issue | 12 |
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| container_title | IEEE transactions on computer-aided design of integrated circuits and systems |
| container_volume | 10 |
| creator | Boothroyd, A.R. Taraswicz, S.W. Slaby, C. |
| description | A circuit-level MOSFET model is presented which is based on the representation of current transport in a sheet channel in terms of the surface potential conditions at the source and drain boundaries. It is established that the surface potential solutions can be obtained by iterative means with negligible computing time penalty. The model is scalable and results in continuous device characteristics under all operating conditions. High accuracy of the model is demonstrated over a wide range of device geometries and terminal voltages. The features of scalability, continuity, and high accuracy are attributed to physical representation of all important effects occurring in MOSFETs. Details on model implementation are provided and include modeling of carrier mobility, saturation region approximation, and representation of quasi-static charges in the device.< > |
| doi_str_mv | 10.1109/43.103501 |
| format | Article |
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It is established that the surface potential solutions can be obtained by iterative means with negligible computing time penalty. The model is scalable and results in continuous device characteristics under all operating conditions. High accuracy of the model is demonstrated over a wide range of device geometries and terminal voltages. The features of scalability, continuity, and high accuracy are attributed to physical representation of all important effects occurring in MOSFETs. Details on model implementation are provided and include modeling of carrier mobility, saturation region approximation, and representation of quasi-static charges in the device.< ></description><identifier>ISSN: 0278-0070</identifier><identifier>EISSN: 1937-4151</identifier><identifier>DOI: 10.1109/43.103501</identifier><identifier>CODEN: ITCSDI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Analog integrated circuits ; Applied sciences ; Circuit simulation ; Digital integrated circuits ; Electronics ; Exact sciences and technology ; Geometry ; Integrated circuit modeling ; MOSFET circuits ; Scalability ; Semiconductor electronics. Microelectronics. Optoelectronics. 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It is established that the surface potential solutions can be obtained by iterative means with negligible computing time penalty. The model is scalable and results in continuous device characteristics under all operating conditions. High accuracy of the model is demonstrated over a wide range of device geometries and terminal voltages. The features of scalability, continuity, and high accuracy are attributed to physical representation of all important effects occurring in MOSFETs. Details on model implementation are provided and include modeling of carrier mobility, saturation region approximation, and representation of quasi-static charges in the device.< ></description><subject>Analog integrated circuits</subject><subject>Applied sciences</subject><subject>Circuit simulation</subject><subject>Digital integrated circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Geometry</subject><subject>Integrated circuit modeling</subject><subject>MOSFET circuits</subject><subject>Scalability</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Solid modeling</topic><topic>Telecommunications</topic><topic>Transistors</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Boothroyd, A.R.</creatorcontrib><creatorcontrib>Taraswicz, S.W.</creatorcontrib><creatorcontrib>Slaby, C.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>IEEE transactions on computer-aided design of integrated circuits and systems</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Boothroyd, A.R.</au><au>Taraswicz, S.W.</au><au>Slaby, C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>MISNAN-a physically based continuous MOSFET model for CAD applications</atitle><jtitle>IEEE transactions on computer-aided design of integrated circuits and systems</jtitle><stitle>TCAD</stitle><date>1991-12-01</date><risdate>1991</risdate><volume>10</volume><issue>12</issue><spage>1512</spage><epage>1529</epage><pages>1512-1529</pages><issn>0278-0070</issn><eissn>1937-4151</eissn><coden>ITCSDI</coden><abstract>A circuit-level MOSFET model is presented which is based on the representation of current transport in a sheet channel in terms of the surface potential conditions at the source and drain boundaries. It is established that the surface potential solutions can be obtained by iterative means with negligible computing time penalty. The model is scalable and results in continuous device characteristics under all operating conditions. High accuracy of the model is demonstrated over a wide range of device geometries and terminal voltages. The features of scalability, continuity, and high accuracy are attributed to physical representation of all important effects occurring in MOSFETs. Details on model implementation are provided and include modeling of carrier mobility, saturation region approximation, and representation of quasi-static charges in the device.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/43.103501</doi><tpages>18</tpages></addata></record> |
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| identifier | ISSN: 0278-0070 |
| ispartof | IEEE transactions on computer-aided design of integrated circuits and systems, 1991-12, Vol.10 (12), p.1512-1529 |
| issn | 0278-0070 1937-4151 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28393280 |
| source | IEEE Electronic Library (IEL) |
| subjects | Analog integrated circuits Applied sciences Circuit simulation Digital integrated circuits Electronics Exact sciences and technology Geometry Integrated circuit modeling MOSFET circuits Scalability Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid modeling Telecommunications Transistors Voltage |
| title | MISNAN-a physically based continuous MOSFET model for CAD applications |
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