Metal-induced lateral crystallization of a-Si thin films by Ni-Co alloys and the electrical properties of poly-Si TFTs

Metal-induced lateral crystallization of a-Si thin films by Ni-Co alloys and the electrical properties of poly-Si TFTs

We have introduced a new process in metal-induced lateral crystallization (MILC). By adding Co to the Ni-MILC process, the electrical characteristics of MILC poly-Si TFTs were considerably improved. In particular, a considerable decrease of TFT leakage current were achieved in both n-type and p-type...

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Veröffentlicht in:IEEE electron device letters 2003-10, Vol.24 (10), p.649-651
Hauptverfasser: Yoon, Yeo-Geon, Kim, Min-Sun, Kim, Gi-Bum, Joo, Seung-Ki
Format: Artikel
Sprache:eng
Schlagworte:
Alloys
Annealing
Cobalt alloys
Crystallization
Devices
Electrical properties
Glass
Leakage current
Liquid crystal displays
Liquid crystals
Nickel alloys
Semiconductor devices
Sputtering
Thin film transistors
Thin films
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Beschreibung
Zusammenfassung:We have introduced a new process in metal-induced lateral crystallization (MILC). By adding Co to the Ni-MILC process, the electrical characteristics of MILC poly-Si TFTs were considerably improved. In particular, a considerable decrease of TFT leakage current were achieved in both n-type and p-type devices.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2003.817610