Surface reconstruction of α-(0001) sapphire: An AFM, XPS, AES and EELS investigation
Single crystal alpha-(0001) sapphire substrates are used for the growth of large band gap or ferroelectric materials for applications in optoelectronic devices. However, the ability of the sapphire to undergo changes in surface structure and the relative ease of oxygen evolvement can influence the g...
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| Veröffentlicht in: | Journal of materials science 2004-04, Vol.39 (8), p.2911-2914 |
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| creator | SAW, K. G |
| description | Single crystal alpha-(0001) sapphire substrates are used for the growth of large band gap or ferroelectric materials for applications in optoelectronic devices. However, the ability of the sapphire to undergo changes in surface structure and the relative ease of oxygen evolvement can influence the growth of deposited materials. A restructuring of the substrate surface induced by annealing in air consists of stable atomic steps ranging from about 0.2 to a few nm. The surface reconstruction assists heteroepitaxial growth of the deposited film. 18 refs. |
| doi_str_mv | 10.1023/B:JMSC.0000021479.20164.f8 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_28392653</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2259677731</sourcerecordid><originalsourceid>FETCH-LOGICAL-c350t-7e7dcbb0df3a7963f2213e70ce1107591300ee79d5d161f14f9fde2f2ea0a9ec3</originalsourceid><addsrcrecordid>eNpdkN9KwzAUxoMoOKfvEBRFYZ05Sds0u9vG5h82FOrAu5CliXZs7UxawcfyRXwmOzcYeG7Oxfl933f4EDoH0gVC2e2g9zhNh12yGQohF11KIA67NjlALYg4C8KEsEPUas40oGEMx-jE-0WDR5xCC83S2lmlDXZGl4WvXK2rvCxwafHPd3DdcHCDvVqv33Nnerhf4P542sGvz2kH90cpVkWGR6NJivPi0_gqf1Mb-Sk6smrpzdlut9FsPHoZ3geTp7uHYX8SaBaRKuCGZ3o-J5lliouYWUqBGU60ASA8EsAIMYaLLMogBguhFTYz1FKjiBJGsza62vquXflRN_lylXttlktVmLL2kiZM0DhiDXjxD1yUtSua3ySlkYg55wwaqreltCu9d8bKtctXyn1JIHLTtxzITd9y37f861vapBFf7iKU12ppnSp07vcOUSwSwYH9Au-Dfq8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2259677731</pqid></control><display><type>article</type><title>Surface reconstruction of α-(0001) sapphire: An AFM, XPS, AES and EELS investigation</title><source>Springer Nature - Complete Springer Journals</source><creator>SAW, K. G</creator><creatorcontrib>SAW, K. G</creatorcontrib><description>Single crystal alpha-(0001) sapphire substrates are used for the growth of large band gap or ferroelectric materials for applications in optoelectronic devices. However, the ability of the sapphire to undergo changes in surface structure and the relative ease of oxygen evolvement can influence the growth of deposited materials. A restructuring of the substrate surface induced by annealing in air consists of stable atomic steps ranging from about 0.2 to a few nm. The surface reconstruction assists heteroepitaxial growth of the deposited film. 18 refs.</description><identifier>ISSN: 0022-2461</identifier><identifier>EISSN: 1573-4803</identifier><identifier>DOI: 10.1023/B:JMSC.0000021479.20164.f8</identifier><identifier>CODEN: JMTSAS</identifier><language>eng</language><publisher>Heidelberg: Springer</publisher><subject>Clean metal, semiconductor, and insulator surfaces ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Eels ; Electron and ion emission by liquids and solids; impact phenomena ; Electron, ion, and scanning probe microscopy ; Exact sciences and technology ; Materials science ; Photoemission and photoelectron spectra ; Physics ; Sapphire ; Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc ; Solid surfaces and solid-solid interfaces ; Structure of solids and liquids; crystallography ; Surface structure and topography ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; X ray photoelectron spectroscopy</subject><ispartof>Journal of materials science, 2004-04, Vol.39 (8), p.2911-2914</ispartof><rights>2004 INIST-CNRS</rights><rights>Journal of Materials Science is a copyright of Springer, (2004). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-7e7dcbb0df3a7963f2213e70ce1107591300ee79d5d161f14f9fde2f2ea0a9ec3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,27911,27912</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15698971$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SAW, K. G</creatorcontrib><title>Surface reconstruction of α-(0001) sapphire: An AFM, XPS, AES and EELS investigation</title><title>Journal of materials science</title><description>Single crystal alpha-(0001) sapphire substrates are used for the growth of large band gap or ferroelectric materials for applications in optoelectronic devices. However, the ability of the sapphire to undergo changes in surface structure and the relative ease of oxygen evolvement can influence the growth of deposited materials. A restructuring of the substrate surface induced by annealing in air consists of stable atomic steps ranging from about 0.2 to a few nm. The surface reconstruction assists heteroepitaxial growth of the deposited film. 18 refs.</description><subject>Clean metal, semiconductor, and insulator surfaces</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Eels</subject><subject>Electron and ion emission by liquids and solids; impact phenomena</subject><subject>Electron, ion, and scanning probe microscopy</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Photoemission and photoelectron spectra</subject><subject>Physics</subject><subject>Sapphire</subject><subject>Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Surface structure and topography</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>X ray photoelectron spectroscopy</subject><issn>0022-2461</issn><issn>1573-4803</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNpdkN9KwzAUxoMoOKfvEBRFYZ05Sds0u9vG5h82FOrAu5CliXZs7UxawcfyRXwmOzcYeG7Oxfl933f4EDoH0gVC2e2g9zhNh12yGQohF11KIA67NjlALYg4C8KEsEPUas40oGEMx-jE-0WDR5xCC83S2lmlDXZGl4WvXK2rvCxwafHPd3DdcHCDvVqv33Nnerhf4P542sGvz2kH90cpVkWGR6NJivPi0_gqf1Mb-Sk6smrpzdlut9FsPHoZ3geTp7uHYX8SaBaRKuCGZ3o-J5lliouYWUqBGU60ASA8EsAIMYaLLMogBguhFTYz1FKjiBJGsza62vquXflRN_lylXttlktVmLL2kiZM0DhiDXjxD1yUtSua3ySlkYg55wwaqreltCu9d8bKtctXyn1JIHLTtxzITd9y37f861vapBFf7iKU12ppnSp07vcOUSwSwYH9Au-Dfq8</recordid><startdate>20040415</startdate><enddate>20040415</enddate><creator>SAW, K. G</creator><general>Springer</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>7QQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20040415</creationdate><title>Surface reconstruction of α-(0001) sapphire: An AFM, XPS, AES and EELS investigation</title><author>SAW, K. G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-7e7dcbb0df3a7963f2213e70ce1107591300ee79d5d161f14f9fde2f2ea0a9ec3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Clean metal, semiconductor, and insulator surfaces</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Eels</topic><topic>Electron and ion emission by liquids and solids; impact phenomena</topic><topic>Electron, ion, and scanning probe microscopy</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Photoemission and photoelectron spectra</topic><topic>Physics</topic><topic>Sapphire</topic><topic>Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Structure of solids and liquids; crystallography</topic><topic>Surface structure and topography</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>X ray photoelectron spectroscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SAW, K. G</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>Ceramic Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SAW, K. G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surface reconstruction of α-(0001) sapphire: An AFM, XPS, AES and EELS investigation</atitle><jtitle>Journal of materials science</jtitle><date>2004-04-15</date><risdate>2004</risdate><volume>39</volume><issue>8</issue><spage>2911</spage><epage>2914</epage><pages>2911-2914</pages><issn>0022-2461</issn><eissn>1573-4803</eissn><coden>JMTSAS</coden><abstract>Single crystal alpha-(0001) sapphire substrates are used for the growth of large band gap or ferroelectric materials for applications in optoelectronic devices. However, the ability of the sapphire to undergo changes in surface structure and the relative ease of oxygen evolvement can influence the growth of deposited materials. A restructuring of the substrate surface induced by annealing in air consists of stable atomic steps ranging from about 0.2 to a few nm. The surface reconstruction assists heteroepitaxial growth of the deposited film. 18 refs.</abstract><cop>Heidelberg</cop><pub>Springer</pub><doi>10.1023/B:JMSC.0000021479.20164.f8</doi><tpages>4</tpages></addata></record> |
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| source | Springer Nature - Complete Springer Journals |
| subjects | Clean metal, semiconductor, and insulator surfaces Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Eels Electron and ion emission by liquids and solids impact phenomena Electron, ion, and scanning probe microscopy Exact sciences and technology Materials science Photoemission and photoelectron spectra Physics Sapphire Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc Solid surfaces and solid-solid interfaces Structure of solids and liquids crystallography Surface structure and topography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) X ray photoelectron spectroscopy |
| title | Surface reconstruction of α-(0001) sapphire: An AFM, XPS, AES and EELS investigation |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T18%3A42%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Surface%20reconstruction%20of%20%CE%B1-(0001)%20sapphire:%20An%20AFM,%20XPS,%20AES%20and%20EELS%20investigation&rft.jtitle=Journal%20of%20materials%20science&rft.au=SAW,%20K.%20G&rft.date=2004-04-15&rft.volume=39&rft.issue=8&rft.spage=2911&rft.epage=2914&rft.pages=2911-2914&rft.issn=0022-2461&rft.eissn=1573-4803&rft.coden=JMTSAS&rft_id=info:doi/10.1023/B:JMSC.0000021479.20164.f8&rft_dat=%3Cproquest_cross%3E2259677731%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2259677731&rft_id=info:pmid/&rfr_iscdi=true |