Surface reconstruction of α-(0001) sapphire: An AFM, XPS, AES and EELS investigation

Single crystal alpha-(0001) sapphire substrates are used for the growth of large band gap or ferroelectric materials for applications in optoelectronic devices. However, the ability of the sapphire to undergo changes in surface structure and the relative ease of oxygen evolvement can influence the g...

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Veröffentlicht in:	Journal of materials science 2004-04, Vol.39 (8), p.2911-2914
1. Verfasser:	SAW, K. G
Format:	Artikel
Sprache:	eng
Schlagworte:	Clean metal, semiconductor, and insulator surfaces Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Eels Electron and ion emission by liquids and solids impact phenomena Electron, ion, and scanning probe microscopy Exact sciences and technology Materials science Photoemission and photoelectron spectra Physics Sapphire Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc Solid surfaces and solid-solid interfaces Structure of solids and liquids crystallography Surface structure and topography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) X ray photoelectron spectroscopy
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Zusammenfassung:	Single crystal alpha-(0001) sapphire substrates are used for the growth of large band gap or ferroelectric materials for applications in optoelectronic devices. However, the ability of the sapphire to undergo changes in surface structure and the relative ease of oxygen evolvement can influence the growth of deposited materials. A restructuring of the substrate surface induced by annealing in air consists of stable atomic steps ranging from about 0.2 to a few nm. The surface reconstruction assists heteroepitaxial growth of the deposited film. 18 refs.
ISSN:	0022-2461 1573-4803
DOI:	10.1023/B:JMSC.0000021479.20164.f8