Matching properties, and voltage and temperature dependence of MOS capacitors

Matching properties, and voltage and temperature dependence of MOS capacitors

The matching properties of MOS capacitors are modeled and compared with measured data. A weighted-capacitor array design approach is described. Voltage and temperature dependence of MOS capacitors are analyzed, modeled, and compared with measured data. It is shown that to a first-order heavily doped...

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Veröffentlicht in:IEEE journal of solid-state circuits 1981-12, Vol.16 (6), p.608-616
1. Verfasser: McCreary, J.L.
Format: Artikel
Sprache:eng
Schlagworte:
Capacitance
Circuits
Dielectric constant
Measurement standards
MOS capacitors
Permittivity
Silicon compounds
Space charge
Temperature dependence
Voltage
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Zusammenfassung:The matching properties of MOS capacitors are modeled and compared with measured data. A weighted-capacitor array design approach is described. Voltage and temperature dependence of MOS capacitors are analyzed, modeled, and compared with measured data. It is shown that to a first-order heavily doped polysilicon accumulates and depletes similar to crystalline silicon.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.1981.1051651