Monolithically integrated detector chip for a two-channel unidirectional WDM link at 1.5 mum

The fabrication and operation of a monolithically integrated InGaASP/InP wavelength division multiplexing (WDM) detector chip is reported. It consists of a Y-branch grating demultiplexer and two p-i-n photodiodes. Polarization-independent operation for two closely spaced channels (Deltalambda=3.6 nm...

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Veröffentlicht in:IEEE journal on selected areas in communications 1990-08, Vol.8 (6), p.1183-1189
Hauptverfasser: Winzer, G, Doldissen, W, Cremer, C, Fiedler, F, Heise, G, Kaiser, R, Marz, R, Mahlein, H F, Morl, L, Nolting, H-P J, Rehbein, W, Schienle, M, Schulte-Roth, G, Unterborsch, G, Unzeitig, H, Wolff, U
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Sprache:eng
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Zusammenfassung:The fabrication and operation of a monolithically integrated InGaASP/InP wavelength division multiplexing (WDM) detector chip is reported. It consists of a Y-branch grating demultiplexer and two p-i-n photodiodes. Polarization-independent operation for two closely spaced channels (Deltalambda=3.6 nm) at lambda=1.5 mum was obtained. In polarization-independent operation, 1.3-mm-long Bragg gratings on buried waveguides showed a peak crosstalk attenuation of 15 dB and a stop bandwidth of 0.2 nm at -10 dB. These values show the high potential of Bragg grating devices for dense wavelength division multiplexing applications. The static electrical properties of the monolithically integrated p-i-n photodiodes (dark current of 2-5 nA at -10 V, breakdown voltage of 45-65 at a 10 muA leakage current) approach the values obtained for discrete devices. The bandwidth of 420 MHz enables operation in the 600-Mbaud region. The external quantum efficiency of the complete detector chip (eta=0.08) is still rather small. However, it could be considered sufficient for the operation of such devices in local networks with distances of a few kilometers
ISSN:0733-8716
DOI:10.1109/49.57825