Improved HBT linearity with a "post-distortion"-type collector linearizer

An HBT amplifier with a "post-distortion"-type linearizer utilizing a base-collector junction diode shows more than 8-dB improvement of adjacent channel power ratio, and the collector linearizer comprising a reverse biased base-collector junction diode requires no additional dc power consu...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2003-03, Vol.13 (3), p.102-104
Hauptverfasser:	JEON, Yong-Joon, KIM, Hyung-Wook, KIM, Min-Seok, AHN, Young-Sik, KIM, Jong-Won, CHOI, Ji-Youn, JUNG, Doo-Chan, SHIN, Jin-Ho
Format:	Artikel
Sprache:	eng
Schlagworte:	Accumulators Amplifiers Applied sciences Channels Circuit properties Collectors Deterioration Diodes Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Heterojunction bipolar transistors Junction diodes Linearity Linearization techniques Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves Multiaccess communication Nonlinearity Operational amplifiers Power amplifiers Power consumption Radio frequency Radiofrequency amplifiers Voltage
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Beschreibung
Zusammenfassung:	An HBT amplifier with a "post-distortion"-type linearizer utilizing a base-collector junction diode shows more than 8-dB improvement of adjacent channel power ratio, and the collector linearizer comprising a reverse biased base-collector junction diode requires no additional dc power consumption and has no deterioration of RF performance. The linearization technique of post-distortion compensates the nonlinearity of HBTs, which arises from the C/sub bc/ variation due to a large-signal swing.
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/LMWC.2003.810113