Short-Channel Poly-Si Thin-Film Transistors with Ultrathin Channel and Self-Aligned Tungsten-Clad Source/Drain
A short-channel polycrystalline silicon (poly-Si) thin-film transistor (W/L = 10 microns/3 microns) with an ultrathin channel (30 nm) and self-aligned tungsten-clad source/drain structure is demonstrated. With WF(6) and SiH(4) gas flow ratio of 40/12, selectively deposited tungsten film over 100 nm...
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Veröffentlicht in: | Electrochemical and solid-state letters 2004, Vol.7 (2), p.G31-G33 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | A short-channel polycrystalline silicon (poly-Si) thin-film transistor (W/L = 10 microns/3 microns) with an ultrathin channel (30 nm) and self-aligned tungsten-clad source/drain structure is demonstrated. With WF(6) and SiH(4) gas flow ratio of 40/12, selectively deposited tungsten film over 100 nm thick can be easily grown on source/drain regions. As a result, the parasitic source/drain resistance is greatly reduced, leading to improvement of device driving ability. Because tungsten deposition can be carried out at a low processing temperature of 300DGC, the proposed simple structure is compatible with conventional top-gate structure and can be readily applied to low-temperature poly-Si fabrication. |
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ISSN: | 1099-0062 |
DOI: | 10.1149/1.1635093 |