Short-Channel Poly-Si Thin-Film Transistors with Ultrathin Channel and Self-Aligned Tungsten-Clad Source/Drain

A short-channel polycrystalline silicon (poly-Si) thin-film transistor (W/L = 10 microns/3 microns) with an ultrathin channel (30 nm) and self-aligned tungsten-clad source/drain structure is demonstrated. With WF(6) and SiH(4) gas flow ratio of 40/12, selectively deposited tungsten film over 100 nm...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Electrochemical and solid-state letters 2004, Vol.7 (2), p.G31-G33
Hauptverfasser: Zan, Hsiao-Wen, Chang, Ting-Chang, Shih, Po-Sheng, Peng, Du-Zen, Kuo, Po-Yi, Huang, Tiao-Yuan, Chang, Chun-Yen, Liu, Po-Tsun
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A short-channel polycrystalline silicon (poly-Si) thin-film transistor (W/L = 10 microns/3 microns) with an ultrathin channel (30 nm) and self-aligned tungsten-clad source/drain structure is demonstrated. With WF(6) and SiH(4) gas flow ratio of 40/12, selectively deposited tungsten film over 100 nm thick can be easily grown on source/drain regions. As a result, the parasitic source/drain resistance is greatly reduced, leading to improvement of device driving ability. Because tungsten deposition can be carried out at a low processing temperature of 300DGC, the proposed simple structure is compatible with conventional top-gate structure and can be readily applied to low-temperature poly-Si fabrication.
ISSN:1099-0062
DOI:10.1149/1.1635093