Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates
This paper reports on state of-the-art HEMT devices and circuit results utilizing 32% and 60% indium content InGaAs channel metamorphic technology on GaAs substrates. The 60% In metamorphic HEMT (MHEMT) has achieved an excellent 0.61-dB minimum noise figure with 11.8 dB of associated gain at 26 GHz....
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| Veröffentlicht in: | IEEE journal of solid-state circuits 2000-09, Vol.35 (9), p.1307-1311 |
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| container_title | IEEE journal of solid-state circuits |
| container_volume | 35 |
| creator | Whelan, C.S. Kazior, T.E. Marsh, P.F. Hoke, W.E. McTaggart, R.A. Lyman, P.S. Lemonias, P.J. Lardizabal, S.M. Leoni, R.E. Lichwala, S.J. |
| description | This paper reports on state of-the-art HEMT devices and circuit results utilizing 32% and 60% indium content InGaAs channel metamorphic technology on GaAs substrates. The 60% In metamorphic HEMT (MHEMT) has achieved an excellent 0.61-dB minimum noise figure with 11.8 dB of associated gain at 26 GHz. Using this MHEMT technology, two and three-stage Ka-band low-noise amplifiers (LNAs) have demonstrated |
| doi_str_mv | 10.1109/4.868040 |
| format | Article |
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The 60% In metamorphic HEMT (MHEMT) has achieved an excellent 0.61-dB minimum noise figure with 11.8 dB of associated gain at 26 GHz. Using this MHEMT technology, two and three-stage Ka-band low-noise amplifiers (LNAs) have demonstrated <1.4-dB noise figure with 16 dB of gain and <1.7 with 26 dB of gain, respectively. The 32% In MHEMT device has overcome the <3.5-V drain bias limitation of other MHEMT power devices, showing a power density of 650 mW/mm at 35 GHz, with V/sub ds/=6 V.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/4.868040</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Circuits ; Gain ; Gallium arsenide ; HEMTs ; High power amplifiers ; Indium gallium arsenide ; Low-noise amplifiers ; mHEMTs ; Millimeter wave technology ; Noise figure</subject><ispartof>IEEE journal of solid-state circuits, 2000-09, Vol.35 (9), p.1307-1311</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2000</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c365t-80a1d417620b425baa8b4cd0443398ca261fec4cea2b90e6ddcd05e3e01e36a13</citedby><cites>FETCH-LOGICAL-c365t-80a1d417620b425baa8b4cd0443398ca261fec4cea2b90e6ddcd05e3e01e36a13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/868040$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/868040$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Whelan, C.S.</creatorcontrib><creatorcontrib>Kazior, T.E.</creatorcontrib><creatorcontrib>Marsh, P.F.</creatorcontrib><creatorcontrib>Hoke, W.E.</creatorcontrib><creatorcontrib>McTaggart, R.A.</creatorcontrib><creatorcontrib>Lyman, P.S.</creatorcontrib><creatorcontrib>Lemonias, P.J.</creatorcontrib><creatorcontrib>Lardizabal, S.M.</creatorcontrib><creatorcontrib>Leoni, R.E.</creatorcontrib><creatorcontrib>Lichwala, S.J.</creatorcontrib><title>Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>This paper reports on state of-the-art HEMT devices and circuit results utilizing 32% and 60% indium content InGaAs channel metamorphic technology on GaAs substrates. The 60% In metamorphic HEMT (MHEMT) has achieved an excellent 0.61-dB minimum noise figure with 11.8 dB of associated gain at 26 GHz. Using this MHEMT technology, two and three-stage Ka-band low-noise amplifiers (LNAs) have demonstrated <1.4-dB noise figure with 16 dB of gain and <1.7 with 26 dB of gain, respectively. The 32% In MHEMT device has overcome the <3.5-V drain bias limitation of other MHEMT power devices, showing a power density of 650 mW/mm at 35 GHz, with V/sub ds/=6 V.</description><subject>Circuits</subject><subject>Gain</subject><subject>Gallium arsenide</subject><subject>HEMTs</subject><subject>High power amplifiers</subject><subject>Indium gallium arsenide</subject><subject>Low-noise amplifiers</subject><subject>mHEMTs</subject><subject>Millimeter wave technology</subject><subject>Noise figure</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0U1Lw0AQBuBFFKxV8OxpQRAvqfuVZHMspbZCi5cK3sJmM7FbkmzcTVr890ZTPHjqaRjm4YXhReiWkgmlJHkSExlJIsgZGtEwlAGN-fs5GhFCZZAwQi7Rlfe7fhVC0hHSa1OWpoIWXHBQe8ClPQS1NR6wqnO8NR_boLEHcLg3qrKu2RqNl_P1BquqKU1hwPlfmsPeaPDY1nihph77LvOtUy34a3RRqNLDzXGO0dvzfDNbBqvXxctsugo0j8I2kETRXNA4YiQTLMyUkpnQORGC80RqxSJagBYaFMsSAlGe98cQOBAKPFKUj9HDkNs4-9mBb9PKeA1lqWqwnU-ZTGKWMH4C5JIn0QmJcSjDuOdjdP8P7mzn6v7blBJCRJxQFvfqcVDaWe8dFGnjTKXcV4_Sn_ZSkQ7t9fRuoAYA_tjx-A1EB5QM</recordid><startdate>200009</startdate><enddate>200009</enddate><creator>Whelan, C.S.</creator><creator>Kazior, T.E.</creator><creator>Marsh, P.F.</creator><creator>Hoke, W.E.</creator><creator>McTaggart, R.A.</creator><creator>Lyman, P.S.</creator><creator>Lemonias, P.J.</creator><creator>Lardizabal, S.M.</creator><creator>Leoni, R.E.</creator><creator>Lichwala, S.J.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| subjects | Circuits Gain Gallium arsenide HEMTs High power amplifiers Indium gallium arsenide Low-noise amplifiers mHEMTs Millimeter wave technology Noise figure |
| title | Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates |
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