Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates

Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates

This paper reports on state of-the-art HEMT devices and circuit results utilizing 32% and 60% indium content InGaAs channel metamorphic technology on GaAs substrates. The 60% In metamorphic HEMT (MHEMT) has achieved an excellent 0.61-dB minimum noise figure with 11.8 dB of associated gain at 26 GHz....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE journal of solid-state circuits 2000-09, Vol.35 (9), p.1307-1311
Hauptverfasser: Whelan, C.S., Kazior, T.E., Marsh, P.F., Hoke, W.E., McTaggart, R.A., Lyman, P.S., Lemonias, P.J., Lardizabal, S.M., Leoni, R.E., Lichwala, S.J.
Format: Artikel
Sprache:eng
Schlagworte:
Circuits
Gain
Gallium arsenide
HEMTs
High power amplifiers
Indium gallium arsenide
Low-noise amplifiers
mHEMTs
Millimeter wave technology
Noise figure
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This paper reports on state of-the-art HEMT devices and circuit results utilizing 32% and 60% indium content InGaAs channel metamorphic technology on GaAs substrates. The 60% In metamorphic HEMT (MHEMT) has achieved an excellent 0.61-dB minimum noise figure with 11.8 dB of associated gain at 26 GHz. Using this MHEMT technology, two and three-stage Ka-band low-noise amplifiers (LNAs) have demonstrated
ISSN:0018-9200
1558-173X
DOI:10.1109/4.868040