Quenched growth of nanostructured lead thin films on insulating substrates

Lead island films were obtained via vacuum vapor deposition on glass and ceramic substrates at 80 K. Electrical conductance was measured during vapor condensation and further annealing of the film up to room temperature. The resistance behavior during film formation and atomic force microscopy of an...

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Veröffentlicht in:Thin solid films 2004-06, Vol.458 (1), p.304-308
Hauptverfasser: Bochenkov, V.E., Karageorgiev, P., Brehmer, L., Sergeev, G.B.
Format: Artikel
Sprache:eng
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Zusammenfassung:Lead island films were obtained via vacuum vapor deposition on glass and ceramic substrates at 80 K. Electrical conductance was measured during vapor condensation and further annealing of the film up to room temperature. The resistance behavior during film formation and atomic force microscopy of annealed films were used as information sources about their structure. A model for the quenched growth, based on ballistic aggregation theory, was proposed. The nanostructure, responsible for chemiresistive properties of thin lead films and the mechanism of sensor response are discussed.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2003.11.188